2SC5379 PANASONIC

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Technical content

Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation n Features l Low noise figure NF. l High gain. l High transition frequency fT. l SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–75 3:Collector SS–Mini Type Package 1.6–0.15 1.6–0.1 1.0–0.10.75–0.15 0.45–0.1 0.50.3 0 to 0.1 0.5 0.8–0.1 0.40.4 0.2–0.1 Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings 125 125 –55 ~ +125 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Noise figure Symbol I CBO IEBO hFE * fT C ob | S21e |2 NF Conditions V CB = 10V , IE = 0 V EB = 1V , IC = 0 V CE = 5V , IC = 10mA V CE = 5V , IC = 10mA, f = 2GHz V CB = 5V , IE = 0, f = 1MHz V CE = 5V , IC = 10mA, f = 1GHz V CE = 5V , IC = 3mA, f = 1GHz min 8.5 typ 7.0 0.6 11.0 1.6 max 200 1.0 Unit mA mA GHz pF dB dB Marking symbol :HT *hFE Rank classification Rank Q R S hFE 80 ~ 115 95 ~ 155 135 ~ 200 Marking Symbol HTQ HTR HTS

PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IC C ob — V CB | S21e |2 — IC NF — IC 06 5413 2 Ta=25˚C 150mA 200mA 250mA 50mA 100mA IB=300mA Collector to emitter voltage VCE (V) Collector current IC (mA ) VCE =5V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 240 200 160 120 VCE =5V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 02 0 1641 2 8 VCE =5V f=1GHz Ta=25˚C Collector current IC (mA ) Forward transfer gain |S21e|2 (dB) 01 0 826 4 3.0 2.4 1.8 1.2 0.6 VCE =5V f=1GHz Ta=25˚C Collector current IC (mA ) Noise figure NF (dB) 02 0 1641 2 8 VCE =5V Collector current IC (mA ) Transition frequency fT (GHz ) 01 0 826 4 1.0 0.8 0.6 0.4 0.2 Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0 160 40 120 80 14020 100 60 150 125 100 Ambient temperature Ta (˚C) Collector power dissipation PC (mW )