2SC5378 PANASONIC

Document overview

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Technical content

Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation n Features l Low noise figure NF. l High gain. l High transition frequency fT. l S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–70 3:Collector S–Mini Type Package 2.1–0.1 1.3–0.10.9–0.1 0.7–0.1 0.3 +0.1 –0 0.15 +0.1 –0.05 2.0–0.2 0.650.2 0.65 0 to 0.1 0.2–0.1Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings 150 150 –55 ~ +150 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector output capacitance Transition frequency Noise figure Foward transfer gain Symbol I CBO IEBO hFE *1 C ob fT NF | S21e |2 Conditions V CB = 10V , IE = 0 V EB = 1V , IC = 0 V CE = 5V , IC = 10mA V CB = 5V , IE = 0, f = 1MHz V CE = 5V , IC = 10mA, f = 2GHz V CE = 5V , IC = 3mA, f = 1GHz V CE = 5V , IC = 10mA, f = 1GHz min 8.5 typ 0.6 1.6 max 200 Unit mA mA pF GHz dB dB *1hFE Rank classification Rank Q R S hFE 80 ~ 115 95 ~ 155 135 ~ 200 Marking symbol :HT

PC — Ta I C — V CE hFE — IC 0 160 40 120 80 14020 100 60 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 0 826 4 120 100 IB=600mA 500mA 400mA 300mA 200mA 100mA Ta=25˚C Collector to emitter voltage VCE (V) Collector current IC (mA ) 1 10 100 10003 30 300 180 150 120 VCE =5V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE