2SC5375 SANYO

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Features

+ High gain: | S2le | *=10dB typ (f=1GHz). + High cutoff frequency : fp=5.2GHz typ. Absolute Maximum Ratings at Ta=25°C unit Collector-to-Base Voltage Vcso 20 Vv Collector-to-Emitter Voltage Vcro 10 v Emitter-to-Base Voltage Verso 2 Vv Collector Current. Ig 100 mA Collector Dissipation Po 150 mW Junction Temperature Tj 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Topo Vop=10V,In=0 10 pA Emitter Cutoff Current Ippo Vep=1V,I¢=0 10) pA DC Current Gain hygl Vop=3V.I¢=7mA 110 180 bpp? Vor=3V,I¢=30mA 100 Gain-Bandwidth Product fp Voe=3V,Ig=7mA 38 5.2 GHz Output Capacitance Cob Vop=8V, f=1MHz 10 15 pF Reverse Transfer Capacitance Cre Vep=8V, f=1MHz 0.7 pF Forward Transfer Gain |S2le 1? Vog=3VIco=7mA, f=1GHz 8 10 dB Noise Figure NF Vor=3V,Ic=7mA, f=1GHz 14°25 4B Marking: NA Package Dimensions 2059B (unit : mm) g S 03 O55. HH aa =“ r—t+—4 [hy ; 2D) rot | 93 vg) | pines {oss 3 20 1: Baso 2: Emitter 3; Collector SANYO : MCP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN N2996TS (KOTO) TA-0824 No.5541-1/5

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a THC ne wi fh tt 10 S739 23 S?ig 2 7 4.0 2 3 3 7 10 2 3 5.7 Collector Current, Ig — mA Collector Current, Ig — mA

3 Cob - VcB 3 Cre - VcB

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1607-— Pc — Ta ont | TTT to LAKE TT SCENE CNS B 2% Zl Pet : +] ARH ooo sp Ambient Temperature,Ta ~ °C arameters Slle : sale £=100MHz, 200 to 2000MHz (003s te) £=100MHz, 200 to 2000M He 200M step Jes jroo 120 60°

10 SBS j200 130 SS SEES 30°

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2s poo Wessneee" -j50 -120" eto or Size - £=100MHz, 200 to 2000MHz (200M step) Size * . ce £=100MHz, 200 to 2000MHz (200MHz step) Sorte Sk a HER SEES ran: [PERS SE” £160" PCR Ket als ob a _ eA WEAR Vesiv —-+— 1h KY ESR tien Rove A] aso 7 “10 2.0GHz SR i Ic=3mA- “4150

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-90" 50 No.5541-3/5

S Parameters (Common emitter) Vog=1V, ic=3mA, Zo= 502 [reaami [ 1su1 [28a [ 1st | 2 [sal | un [ Sel | 2m | | 10 | osr5 [aoa [20 [ as21 | ose | ora [anos [23 | [200 | “ore [07 | sere [ania [oan | exe | ors | 20 _| |_ 400 [oer | 159 | 47aa [toa7 | oass [ora [osae [soa | | __ so | ors | -tse2 [sass | o2 | oss [oa [ose | ns | [soo oser | 1887 [2008 [roa [oss | a0 | 080 | -r0a | [om [oss [ sos anes [toa | oxes |x| o800| -a08 | [sam [ose | -irar_[a0r0 | eaa | oxre | s80| oni | -s50_| [sao [oso [aves [aese [ser | ous [asa | oaos | -is | [i600 [ose [sos | 2400 [a0 oan | s68 | 0508 | -057_| [iam [ose | sesa | aes [ea | ome | see [ose _| nse | [2000 [ose [sees | 1ais [ses [oz | sae [ os0a | -1001_| Vee=3V, I= 7mA, Zp=502 [ Prati | Isui [2a | lal | 4a [Sei | 2a [mt] an | [0 form [a | aeise [1465 [ooo | 050 | osse_| 200 | [~s00 [oes | -s48 | seams | x22 | oom | ez | oo | «0 | [00 [9805 | miass | raon [sons [oom | ase | ons | sa _| [coo | cara | -ias2 | save |o07 | oose | «03 | oni | -o50 | |__s0o | ossa {606 | aves [oor [one | aso | oars [ -v02 | [oc [oases | oa | oars | ree | osm | sa | one | -ras_| |__1200 | oss [-arze | 27aa [oso | osar [ozo [ o2s0 | 76 | [soo [o4a6 [ass | aan | esa | oases | soa | onm0 [ 106 | [1600 [ase | “seno 230s [eso [oxo | saa | ome | -o40 | [10 [oa | sesa | 10m | cos [oan | sis | oor | -o00_| [__ 200 | osas | s6z7 | a760 [457 | oze2 [soa [oso | -230 | Vor =5V,Ic¢=20mA, Zo=502 [ream [ isu! | 28a | ial | an [1Se) | a [ei | en | [100 | 080s [ros | aseio | 1048 | oums | aa | ova | 103 _| [200 [aso | -ior7 | 11000 | anes | oon | sea | oan | saa | [too [040s | mies [eas | 067 | oaeo | eee | case | aio | [soo [oan | 1008 | ease | sea | oom | is | can | -osa | [200 [ease [anno | 4000 [100 | osco | a8 | oa00 | ors | 1000 | aasr | -1e6 [asco [ves | oami | eos | oxee | -r00 | [i900 [oa [_v6a | ase | es | oxa | oa0 | osm | 12a] [sao [oaes | 1soa | aoe | e21 | ose | ero | care | 750] [sem | oaee | asae | ass [oz oss | so | care | -e01 | | 1800 | osee [16.8 | 2ae2 [20 | oas [sro [oar | -058 | [2000 [ose | asen | ani | aes | oam6 | seo | oas0 | -s0a | No,5541-4/5

(No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss, Ml Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 1996, Specifications and information herein are subject to change without notice, No.5541-5/5