2SC5363 PANASONIC

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Technical content

2SC5363(Tentative) Silicon NPN epitaxial planer type For low-voltage high-frequency amplification n Features l High transition frequency fT. l Small collector output capacitance Cob. l SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–75 3:Collector SS–Mini Type Package 1.6–0.15 1.6–0.1 1.0–0.10.75–0.15 0.45–0.1 0.50.3 0 to 0.1 0.5 0.8–0.1 0.40.4 0.2–0.1Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings 125 125 –55 ~ +125 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector output capacitance Transition frequency Foward transfer gain Noise figure Symbol I CBO IEBO hFE C ob fT | S21e |2 NF Conditions V CB = 5V , IE = 0 V EB = 1V , IC = 0 V CE = 3V , IC = 10mA V CB = 3V , IE = 0, f = 1MHz V CE = 3V , IC = 10mA, f = 1.5GHz V CE = 0.3V , IC = 1mA, f = 0.9GHz V CE = 0.3V , IC = 1mA, f = 0.9GHz min typ 100 0.4 6.5 1.7 max 200 0.7 Unit mA mA pF GHz dB dB Marking symbol :3Y

PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IC | S21e |2 — IC NF — IC C ob — V CB 0 160 40 120 80 14020 100 60 150 125 100 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 06 5413 2 Ta=25˚C 400mA 200mA 500mA 300mA 100mA IB=600mA Collector to emitter voltage VCE (V) Collector current IC (mA ) VCE =3V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.001 0.003 0.01 0.03 0.1 0.3

10 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 120 100 VCE =3V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE Collector current IC (mA ) Transition frequency fT (GHz ) 0.1 1 10 1000.3 3 30 0.1 0.3 100 300

1000 VCE =3V

f=1.5GHz 0.1 1 10 1000.3 3 30 VCE =0.3V f=900MHz Collector current IC (mA ) Forward transfer gain |S21e|2 (dB) 0.1 0.3 1 3 10 4.8 4.0 3.2 2.4 1.6 0.8 VCE =0.3V f=900MHz Collector current IC (mA ) Noise figure NF (dB) 1 3 10 30 100 1.2 1.0 0.8 0.6 0.4 0.2 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)