2SC5356 TOSHIBA

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TOSHIBA 2$C5356 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR APPLICATIONS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS y somax, 3 DC-DC CONVERTER APPLICATIONS fess 2 pmax ae ~ @ High Collectors Breakdown Voltage : VoEO = 800V tT 8 ; tte = High DC Current Gain: hyp = 15 (Min.) (Ig = 0.15 A) uibbas go MAXIMUM RATINGS (Ta = 25°C) s.omax, 3 52202] & yp SM CHARACTERISTIC SYMBOL | RATING 4 Collector-Base Voltage Veso | 900 [| V1] cesors s Lae Collector-Emitter Voltage VCEO 0.95max Ei r 0.6MAX. Emitter-Base Vollage VEBO sect] Ty ees Collector Current c c A ee el Collector Power Ta = 25°C Po w ae COE SINe) Dissipation Te = 25°C 3._ EMITTER Junction Temperature JEDEC = Storage Temperature Range =55~150 TOSHIBA (A) 2-7B5A_ (B) 2-7B6A @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual Property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-09-30 1/4

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [ xan. | rye. [max.[unzr] Collector Cut-off Current Icpo___|Vcp = 720V, Ip =0 | — | — | 100 | pA | Emitter Cut-off Current IEBO VEB =7V, Ic =0 [| — | — |[ 10 [ pA | Collector-Base Breakdown ameniesianin=e [om [- |v Collector-Emitter Breakdown _ _ owene=iemn=o we [— [|v . hep () [Vor = 5V, Ic = 1mA DC Current Gain hpE@ [Veg = 5V. Ic =0.15A Collector-Emitter Saturation cs Sem oriennesvers —[-[— Pow] Base-Emitter Saturation sminofessanm=oam [=| — foal 20us Voc = 360 V, Rise Time tr pay ce gS 0.7 I Ioi$s B1 Ipi is Switching /giorage Ti B29 4.0 Time rage Time | tetg INPUT ya, OUTPUT 0 | ys Fall Time tf Tpi = 0.24 A, Igo = —0.48A DUTY CYCLE = 1% 1999-09-30 2/4

TOSHIBA 2$C5356 Ic - VCE 4 Ic - VBE COMMON EMITTER COMMON EMITTER W 2 gp tes 20 2 Vor =5V } s | [| [ ft < 7 : ees LTT 2| V/V g jo oe g Hh, / ee g t= 2 j | eS og Try 2 | 2 : | = aa Fb ere Pu 8 al g Ay) f Tg = 002A FEE] LiL eA | 0 2 4 6 3 10 0 02 04 067 08 10 12 14 COLLECOR-EMITTER VOLTAGE Vcg (V) BASE-EMITTER VOLTAGE VpE (V) hFE — Ic VCE (sat) — Ic

000 Sr a 10) ===555 eee

See ti eecrt eect eet z roo eres EEE a | | io} Ic/Ip=5 Cer er e Cc cc en gs oe CC Coony ee ee | ee SE Pre = roe FE ae fp SE eS ES SSS resi SSS SStstt SS Seer ge ooo is > _—— a g [2s] TT NY = a LY Seca mall ag EE

8 See Seger i == esth, Ett ze | Te TTT

2 FFA St Ee ll Ly il alll

a vere oN a | a = 2 _—— Ses Ha 0.001 or {TUM TT) 8 og SSS ti COLLECTOR CURRENT Ig (A) COLLECTOR CURRENT Ic (A) sg VBE (sat) — Ic SWITCHING CHARACTERISTICS S 10 10S —— = Sees = ess ee oe | S fpotse wore SS 2, (Cm Tt oo 2 = 20,8 1 A Ds, S|

2 LUT = yd | Bee TTI |

SS Sot 9 — oe Sees Po Eee a z [Pe = 25°C ——se eee 5 tt tot} = a | =I FEAT re = tore HHT So a oe INK Fy | 0 & PSEA a | | & (Ct Pet < — 2 ot LT TTT TT oa LUTE Te TTT dor or 1 10 0.01 o4 1 10 COLLECTOR CURRENT Ic (A) COLLECTOR CURRENT Ic (A) 1999-09-30 3/4

(CONTINUOUS) 2, 2, SONNUIN_ LN | EEF ones NESS NSH fA FHA AH a EAH 100m SKN 2 coon DCN a fT TTI TTTINANIATTT pe ell NAN! S 01 FFHt DC OPERATION SO AG

8 ESSSeHi tea = SNA

nonreretitive = [ETH PULSE Te = 25°C. COT CURVES MUST BE ALI LARORAAA DERATED LINEARLY WITH INCREASE IN| Vero MAX. ooo enrenaones ||| | “oT 3.5 #10 30 50 ©6100 300 500 1000 COLLECTOR-EMITTER VOLTAGE VcE (V) 1999-09-30 4/4