2SC5347A

2SC5347A SANYO

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• High-frequency medium output amplification (VCE=5V , IC=50mA) : fT=4.7GHz typ (f=1GHz). :⏐S21e⏐2=8dB typ (f=1GHz). : NF=1.8dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-to-Base Voltage VEBO 2V Collector Current IC 150 mA Collector Dissipation PC When mounted on ceramic substrate (900mm2✕0.8mm) 1.3 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C SANYO Semiconductors DATA SHEET www.semiconductor-sanyo.com/network D0308AB MS IM TC-00001778 Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 2SC5347A NPN Epitaxial Planar Silicon Transistor High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications

No. A1087-2/6 Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB=10V, IE=0A 1.0 μA Emitter Cutoff Current I EBO VEB=1V, IC=0A 10 μA DC Current Gain h FE VCE=5V, IC=50mA 60* 270* Gain-Bandwidth Product f T VCE=5V, IC=50mA 3 4.7 GHz Output Capacitance Cob V CB=10V, f=1MHz 1.3 2.0 pF Reverse Transfer Capacitance Cre V CB=10V, f=1MHz 0.9 pF Forward Transfer Gain ⏐S21e⏐

2 VCE=5V, IC=50mA, f=1GHz 6 8 dB

Noise Figure NF V CE=5V, IC=50mA, f=1GHz 1.8 3.0 dB * : The 2SC5347A is classified by 50mA hFE as follows : Marking CZ CZ CZ Rank D E F hFE 60 to 120 90 to 180 135 to 270 Package Dimensions unit : mm (typ) 7007A-004 1 : Base 2 : Collector 3 : Emitter SANYO : PCP 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 12 3 1.5 0.75 Top View Bottom View

No. A1087-3/6 Collector Current, IC -- mA Noise Figure, NF -- dB NF -- IC ⏐S21e⏐2 -- IC Collector Current, IC -- mA Forward Transfer Gain, ⏐S21e⏐2 -- dB Collector Dissipation, PC -- W PC -- Ta Ambient Temperature, Ta -- °CITR08161 1.0 23 5 7 23 3 5710 100 2 1.0 23 5 7 23 23 577 10 100 ITR08162 0 20 40 60 80 100 120 140 160 0.4 0.2 0.6 0.8 1.0 1.2 1.3 1.4 ITR08163 VCE=5V f=1GHz VCE=5V f=1GHz When mounted on ceramic substrate (900mm2✕0.8mm) Cre -- VCB Collector-to-Base V oltage, VCB -- V Reverse Transfer Capacitance, Cre -- pF Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF ITR08159 f=1MHz ITR08160 f=1MHz 31.0 103520.1 7 352 772 3 5 321.0 73 520.1 772 10 1.0 0.1 1.0 0.1 fT -- IC Collector Current, IC -- mA Gain-Bandwidth Product, fT -- GHz ITR08158 23 5 77 10 23 23 57 1001.0 1.0 0.1 VCE=5V hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE Collector-to-Emitter V oltage, VCE -- V IC -- VCE Collector Current, IC -- mA 100 1.0 23 5 7 23 5 7 23 10 100 IT14231 VCE=5V 160 140 120 100 024 8 1 0 6 IT14230 IB=0μA 100μA 200μA 300μA 400μA 500μA 600μA 700μA 800μA900μA1000μA

No. A1087-4/6 S Parameter S11e f=100MHz to 1200MHz(100MHz Step) S21e f=100MHz to 1200MHz(100MHz Step) S12e f=100MHz to 1200MHz(100MHz Step) S22e f=100MHz to 1200MHz(100MHz Step) j50 j25 j10 --j10 --j25 --j50 --j100 --j150 --j200 --j250 j100 j150 j200 j250 90° 120° 150° ±180° --150° --120° --90° --30° --60° 60° 30° 16 201284 90° 120° 150° ±180° --150° --120° --90° --30° --60° 60° 30° j50 j25 j10 --j10 --j25 --j50 --j100 --j150 --j200 --j250 j100 j150 j200 j250 ITR08164 ITR08165 ITR08166 ITR08167 10 150 250 50025 50 100 150 250 50050 10010 25 0.1GHz VCE=5V IC=20mA VCE=8V IC=70mA VCE=5V IC=50mA 1.2GHz VCE=5V IC=50mA VCE=8V IC=70mA VCE=5V IC=20mA VCE=5V IC=50mA VCE=8V IC=70mAVCE=5V IC=20mA VCE=8V IC=70mA VCE=5V IC=20mA 0.1GHz 0.1GHz 1.2GHz 0.1GHz 1.2GHz VCE=5V IC=50mA 1.2GHz

No. A1087-5/6 S Parameters (Common emitter) VCE=5V , IC=50mA, ZO=50Ω VCE=5V , IC=20mA, ZO=50Ω VCE=8V , IC=70mA, ZO=50Ω

No. A1087-6/6PS SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. This catalog provides information as of December, 2008. Specifications and information herein are subject to change without notice.