2SC5335 PANASONIC

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2SC5335(Tentative) Silicon NPN epitaxial planer type For low-frequency output amplification n Features l High foward current transfer ratio hFE . l Low collector to emitter saturation voltage VCE(sat). n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base MT2 Type Package 2.5–0.1 4.5–0.114.5–0.5 2.5–0.5 2.5–0.5 2.5–0.1 6.9–0.1 1.05 –0.05 (1.45) 4.00.7 0.8 0.15 0.5 0.21.01.0 0.65 max. 0.45 +0.1 –0.05 0.45 +0.1 –0.05 321 Symbol V CBO V CEO V EBO ICP IC PC *1 Tj Tstg Ratings 1.5 0.7 1.0 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol I CBO ICEO V CBO V CEO V EBO hFE *1 V CE(sat) fT C ob Conditions V CB = 20V , IE = 0 V CE = 20V , IB = 0 IC = 10mA, IE = 0 IC = 1mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 150mA IC = 500mA, IB = 50mA V CB = 10V , IE = –10mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz min 400 typ 0.15 200 max 2000 0.4 Unit mA mA V V V V MHz pF *1 Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion *1hFE Rank classification Rank R S T hFE 400 ~ 800 600 ~ 1200 1000 ~ 2000 1.2–0.1 0.65max. 0.45 0.1 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type)

PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC C ob — V CB 0 160 40 120 80 14020 100 60 2.0 1.6 1.2 0.8 0.4 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 120 100 Ta=25˚C 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 10mA IB=100mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 1 10 100 10003 30 300 0.001 0.003 0.01 0.03 0.1 0.3

10 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=–25˚C25˚C 75˚C Collector current IC (mA ) Base to emitter saturation voltage VBE(sat) (V) 1 10 100 10003 30 300 1800 1500 1200 900 600 300 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 1 3 10 30 100 f=1MHz IE=0 Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)