2SC5333 SANKEN
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Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator, Switch, and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj T stg 2SC5333 300 300 0.2 35(Tc=25°C) 150 –55to+150 Unit V V V A A W n Absolute maximum ratings n Electrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB 2SC5333 1.0max 1.0max 300min 30min 1.0max 10typ 75typ Unit mA mA V V MHz pF Conditions V CB=300V VEB=6V IC=25mA VCE=4V, IC=0.5A IC=1.0A, IB=0.2A VCE=12V, IE=–0.2A VCB=10V, f=1MHz 2SC5333 (Ta=25°C) (Ta=25°C) IC –V CE Characteristics (Typical) h FE –IC Characteristics (Typical) h FE –IC Temperature Characteristics (Typical) IC –V BE Temperature Characteristics (Typical)V CE (sat)–IB Characteristics (Typical) 213 4 Collector-Emitter Voltage VCE (V) Collector Current IC (A) IB =200mA IB =20mA/stop Safe Operating Area (Single Pulse)fT –IE Characteristics (Typical) 0 0.1 0.2 0.3 Base Current IB (A) Collector-Emitter Saturation Voltage VCE(sat) (V) IC =1A 3 10 1000 2000 100 100 200 Collector Current IC (mA) DC Current Gain h FE (VCE =4V) Typ Base-Emittor Voltage V BE (V) Collector Current IC (A) (VCE =4V) 125˚C (Case Temp)25˚C (Case Temp) –30˚C (Case Temp) (VCE =4V) 3 5 10 50 100 500 1000 2000 200 100 Collector Current IC (mA) DC Current Gain h FE 25˚C –30˚C 125˚C Cut-off Frequency fT (MH Z ) (VCE =12V) Emitter Current IE (A) Typ θj-a–t Characteristics Pc –Ta Derating 0.3 0.5 1 10 100 1000 Time t(ms) Transient Thermal Resistance θj-a(˚C/W) 00 25 50 75 100 125 150 Ambient Temperature Ta(˚C) Maximum Power Dissipation P C (W) With Infinite heatsink Without Heatsink n Typical Switching Characteristics (Common Emitter) VCC (V) 100 RL (Ω ) 100 IC (A) 1.0 IB2 (A) –0.2 ton (ms) 0.3typ tstg (ms) 4.0typ tf (ms) 1.0typ IB1 (A) 0.1 External DimensionsFM20(TO220F) ø3.3±0.2 10.1±0.2 4.0±0.2 16.9±0.313.0min 8.4±0.2 0.8±0.2 3.9 ±0.2 2.542.54 1.35±0.15 0.85+0.2 -0.1 1.35±0.15 2.2±0.2 4.2±0.2 2.8 c0.5 2.4±0.20.45+0.2 -0.1 BE C a b Weight : Approx 2.0g a. Type No. b. Lot No. V (V)