2SA1973 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Adoption of FBET, MBIT processes.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • Ultrasmall package facilitates miniaturization in end products. Specifications ( ) : 2SA1973 Absolute Maximum Ratings at Ta = 25˚C Mounted on a glass-epoxy board (20·30·1.6mm) retemaraPl obmySs noitidnoCs gnitaRt inU egatloVesaB-ot-rotcelloCV OBC 03)–(V egatloVrettimE-ot-rotcelloCV OEC 52)–(V egatloVesaB-ot-rettimEV OBE 6)–(V tnerruCrotcelloCI C 1)–(A )esluP(tnerruCrotcelloCI PC 3)–(A tnerruCesaBI B 002)–(A m noitapissiDrotcelloCP C 052W m erutarepmeTnoitcnuJj T 051 erutarepmeTegarotSg tsT 051+ot55– retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am tnerruCffotuCrotcelloCI OBC V BC I,V02)–(= E 0=1 .0)–(A µ tnerruCffotuCrettimEI OBE V BE I,V3)–(= C 0=1 .0)–(A µ niaGtnerruCCDh EF V EC I,V2)–(= C Am001)–(=* 531* 004 knaR5 6 h EF 072ot5310 04ot002 * : The 2SA1973/2SC5310 are classified by 100mA hFE as follows : Continued on next page. Marking : 2SA1973 : NS 2SC5310 : NN

No.5613–2/4 Continued on preceding page. Switching Time Test Circuit VR R L VCC =12VVBE =- -5V 20IB1= - -20IB2= IC =500mA + +50W INPUT OUTPUT 1kΩ 100mF 470 µF PW=20 ms IB1 D.C.≤1% IB2 (For PNP, the polarity is reversed.) Ta=75 --25 2SA1973 V CE =--2V Pulse --1000 --800 --600 --200 --400 IC -- VBE ITR08236 2SC5310 V CE =2V Pulse IC -- VBE ITR08237 Ta=75 --25 1000 800 600 200 400 IB =0 --2mA IB =0 2mA 4mA 6mA --6mA ITR08235 --1.0 --0.8 --0.6 --0.4 --0.2 1.0 0.8 0.6 0.4 0.2 IC -- VCE 2SA1973 Pulse ITR08234 IC -- VCE 2SC5310 Pulse --4mA Collector Current, IC –ACollector Current, IC –m A Collector-to-Emitter Voltage, VCE –V Collector Current, IC –A Collector-to-Emitter Voltage, VCE –V Base-to-Emitter Voltage, VBE –V Collector Current, IC –m A Base-to-Emitter Voltage, VBE –V retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am tcudorPhtdiwdnaB-niaGf T V EC I,V01)–(= C Am05)–(=0 51z HM ecnaticapaCtuptuOb oCV BC zHM1=f,V01)–(=9 1)23(F p egatloVnoitarutaSrettimE-ot-rotcelloCV EC )tas(I C I,Am005)–(= B Am52)–(= )051–() 003–(V m 0010 02V m egatloVnoitarutaSrettimE-ot-esaBV EB )tas(I C I,Am005)–(= B Am52)–(=5 8.0)–(2 .1)–(V egatloVnwodkaerBesaB-ot-rotcelloCV OBC)RB( IC I,Aµ01)–(= E 0=0 3)–(V egatloVnwodkaerBrettimE-ot-rotcelloCV OEC)RB( IC R,Am1)–(= EB =¥ 52)–(V egatloVnwodkaerBesaB-ot-rettimEV OBE)RB( IE I,Aµ01)–(= C 0=6 )–(V emiTNO-nruTt no tiucriCtseTdeificepseeS 06)06(s n emiTegarotSt gts tiucriCtseTdeificepseeS )053( sn 005 sn emiTllaFt f tiucriCtseTdeificepseeS 52)52(s n

No.5613–3/4 VCE (sat) -- IC --100 --1000 --10 --25°CTa=75 --25 °CTa=75 VCE (sat) -- IC ITR08244 ITR08245 2SC5310 IC / IB =20 Pulse 2SA1973 IC / IB =20 Pulse Cob -- VCB ITR08243 2SA1973 V CE =--10V Pulse Cob -- VCB 100 100 --1.0 3773 2 --10 255 1.0 3773 2 10 255 ITR08242 fT -- IC 100 1000 25 3--10 7 --100 25 37 --1000 25 310 7 100 25 37 1000 100 1000 ITR08240 2SC5310 V CE =10V Pulse 2SA1973 f=1MHz 2SC5310 f=1MHz ITR08241 fT -- IC 25°C 0.01 23 5 77 0.1 23 23 57 1.0 100 25°C Ta=75°C --25°C hFE -- IC 2SA1973 V CE =--2V Pulse ITR08238 100 1000 Ta=75°C --25°C 100 hFE -- IC 25°C 2SC5310 V CE =2V Pulse ITR08239 25°C DC Current Gain, hFE Collector Current, IC –A DC Current Gain, hFE Collector Current, IC –A Gain-Bandwidth Product, fT – MHz Collector Current, IC –m A Gain-Bandwidth Product, fT – MHz Collector Current, IC –m A Output Capacitance, Cob – pF Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob – pF Collector-to-Base V oltage, VCB -- V Collector Current, IC –A Collector-to-Emitter Saturation Voltage, VCE (sat) – mV Collector Current, IC –A Collector-to-Emitter Saturation Voltage, VCE (sat) – mV

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2000. Specifications and information herein are subject to change without notice. 2SA1973/2SC5310 PS No.5613–4/4 2SA1785 / 2SC4645 280 240 250 200 160 120 2006 0 40 80 100 140 120 160 PC -- Ta ITR08249 PT=100 µs 0.1 1.0 0.01 107 1.025 37 25 32 5 3 DC operation 10ms ICP 1msIC ITR08248 Ta=25°C Single pulse Mounted on a glass-epoxy board (20·30·1.6mm) For PNP, the minus sign (–) is omitted. 2SA1973 / 2SC5310 2SA1973 / 2SC5310 A S O VBE (sat) -- IC --1.0 2SA1973 IC / IB =20 Pulse ITR08246 25°C VBE (sat) -- IC ITR08247 25°C --25°C Ta=75°C 1.0 2SC5310 IC / IB =20 Pulse 0.01 23 5 77 0.1 23 23 57 1.0 --25°C Ta=75°C Collector Current, IC –A Base-to-Emitter Saturation Voltage, VBE (sat) – V Collector Current, IC –A Base-to-Emitter Saturation Voltage, VBE (sat) – V Collector Current, IC –A Collector-to-Emitter Voltage, VCE –V Collector Dissipation, PC –m W Ambient Temperature, Ta – ˚C Mounted on a glass-epoxy board (20

  • 30·1.6mm)