2SC5310 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 30 V Collector-emitter voltage V CEO 25 V Emitter-base voltage V EBO 6V Collector current I C 1A Collector current (pulse) I CP 3A Base current I B 200 mA Collector dissipation * P C 250 mW Jumction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 * Mounted on a glass-epoxy board (20× 30× 1.6mm)
www.kexin.com.cn2 SMD Type ICSMD Type Transistors 2SC5310 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB = 20V, IE=0 0.1 ìA Emitter cutoff current I EBO VEB =3 V ,IC=0 0.1 ìA DC current gain h FE VCE =2V , IC = 100mA 135 400 Gain bandwidth product f T VCE = 10V , IC = 50mA 150 MHz Output capacitance C ob VCB = 10V , f = 1.0MHz 19 pF Collector-emitter saturation voltage V CE(sat) IC = 500mA , IB = 25mA 100 200 mV Base-emitter saturation voltage V BE(sat) IC = 500mA , IB = 25mA 0.85 1.2 V Collector-base breakdown voltage V (BR)CBO IC = 10ìA , IE =0 3 0 V Collector-emitter breakdown voltage V (BR)CEO IC =1 m A,RBE = 25 V Emitter-base breakdown voltage V (BR)EBO IE = 10ìA , IC =0 6 V Turn-on time t on 60 ns Storage time t stg 500 ns Fall time t f 25 ns hFE Classification Marking Rank 5 6 hFE 135 270 200 400 NN