Download PDF2SC5295J PANASONIC
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1Publication date: December 2002 SJC00283BED 2SC5295J Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification ■ Features
- High transition frequency fT
- Low collector output capacitance (Common base, input open cir- cuited) Cob
- SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 01 µA Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 01 µA Forward current transfer ratio * hFE VCE = 8 V, IC = 20 mA 50 170 Transition frequency f T VCE = 8 V, IC = 15 mA, f = 1.5 GHz 7.0 8.5 GHz Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz 0.6 1.0 pF (Common base, input open circuited) Foward transfer gain S21e2 VCE = 8 V, IC = 15 mA, f = 1.5 GHz 7 9 dB Maximum unilateral power gain G UM VCE = 8 V, IC = 15 mA, f = 1.5 GHz 10 dB Noise figure NF V CE = 8 V, IC = 7 mA, f = 1.5 GHz 2.2 3.0 dB ■ Electrical Characteristics Ta = 25°C ± 3°C Unit: mm Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO 15 V Collector-emitter voltage (Base open) V CEO 10 V Emitter-base voltage (Collector open) V EBO 2V Collector current I C 65 mA Collector power dissipation P C 125 mW Junction temperature T j 125 °C Storage temperature T stg −55 to +125 °C Marking Symbol: 3S Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE 50 to 120 100 to 170 0.27±0.02 0.12+0.03 –0.01 0.80±0.05(0.80) 0.85 1.60±0.05 0 to 0.02 0.10 max. 0.70+0.05 –0.03 (0.375) 1.60+0.05 –0.03 1.00±0.05 (0.50)(0.50) +0.05 –0.03 1: Base 2: Emitter 3: Collector EIAJ: SC-89 SSMini3-F1 Package
2 SJC00283BED
VCE(sat) IC hFE IC Cob VCB PC Ta IC VCE IC VBE 140 120 100 0 140 6020 80 12040 100 Ambient temperature Ta (°C) Collector power dissipation PC (mW) 01 2 10826 4 Ta = 25°C IB = 250 µA 200 µA 150 µA 100 µA 50 µA Collector-emitter voltage VCE (V) Collector current IC (mA) 120 100 VCE = 8 V Ta = 85°C 25°C −25°C Base-emitter voltage VBE (V) Collector current IC (mA) 0.01 0.1 0.1 1 10 100 IC / IB = 10 Ta = 85°C 25°C −25°C Collector current IC (mA) Collector-emitter saturation voltage VCE(sat) (V) 1 10 100 160 120 100 140 VCE = 8 V Ta = 85°C 25°C −25°C Collector current IC (mA) Forward current transfer ratio hFE 01 2 841 6 0.1 f = 1 MHz Ta = 25°C Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF)
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