2SC5295 PANASONIC

Document overview

Silicon NPN epitaxial planer type For 2 GHz band low-noise amplification I Features

High transition frequency f T
Low collector output capacitance C ob
SS-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. I Absolute Maximum Ratings Ta = 25°C 1: Base 2: Emitter 3: Collector EIAJ: SC-75 SS-Mini Type Package (3-pin) Unit: mm Parameter Symbol Rating Unit Collector to base voltage V CBO 15 V Collector to emitter voltage V CEO 10 V Emitter to base voltage V EBO 2V Collector current I C 65 mA Collector power dissipation P C 125 mW Junction temperature T j 125 °C Storage temperature T stg −55 to +125 °C 1.6±0.15 1.6±0.1 1.0±0.1 0.75±0.15 0.45±0.1 0 to 0.1 (0.5) (0.3) (0.5) 0.8±0.1(0.4) 0.15+0.1 –0.050.2+0.1 –0.05 1 2 0.2±0.1 Marking Symbol: 3S I Electrical Characteristics Ta = 25°C ± 3°C Rank Q R S hFE 50 to 120 100 to 170 150 to 300 Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = 10 V, IE = 01 µA Emitter cutoff current I EBO VEB = 1 V, IC = 01 µA Forward current transfer ratio * hFE VCE = 8 V, IC = 20 mA 50 300 Transition frequency f T VCE = 8 V, IC = 15 mA, f = 1.5 GHz 7.0 8.5 GHz Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz 0.6 1.0 pF Forward transfer gain | S21e | 2 VCE = 8 V, IC = 15 mA, f = 1.5 GHz 7 9 dB Power gain GUM V CE = 8 V, IC = 15 mA, f = 1.5 GHz 10 dB Noise figure NF V CE = 8 V, IC = 7 mA, f = 1.5 GHz 2.2 3.0 dB Note) *: Rank classification