2SC5277A SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

  • Low-noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz).
  • High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz).
  • High cut-off frequency : fT=8GHz typ.
  • Low-voltage, low-current operation (VCE=1V , IC=1mA). :f T=3.5GHz typ. : ⏐S21e⏐2=5.5dB typ (f=1.5GHz).
  • Ultrasmall-sized package permitting applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 20 V Collector-to-Emitter Voltage V CEO 10 V Emitter-to-Base Voltage V EBO 1.5 V Collector Current I C 30 mA Collector Dissipation P C 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C SANYO Semiconductors DATA SHEET www.semiconductor-sanyo.com/network O2908AB MS IM TC-00001687 Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 2SC5277A NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier OSC Applications

No. A1075-2/6 Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB=10V, IE=0A 1.0 μA Emitter Cutoff Current I EBO VEB=1V, IC=0A 10 μA DC Current Gain h FE VCE=5V, IC=10mA 60* 270* Gain-Bandwidth Product fT1V CE=5V, IC=10mA 5 8 GHz fT2V CE=1V, IC=1mA 3.5 GHz Output Capacitance Cob V CB=10V, f=1MHz 0.45 0.7 pF Reverse Transfer Capacitance Cre V CB=10V, f=1MHz 0.30 pF Forward Transfer Gain ⏐S21e⏐ 21V CE=5V, IC=10mA, f=1.5GHz 8 10 dB ⏐S21e⏐ 22V CE=1V, IC=1mA, f=1.5GHz 5.5 dB Noise Figure NF1 V CE=5V, IC=5mA, f=1.5GHz 1.4 3.0 dB NF2 V CE=2V, IC=3mA, f=1GHz 0.9 dB * : The 2SC5277A is classified by 10mA hFE as follows : Marking D1 D2 D3 Rank 1 2 3 hFE 60 to 120 90 to 180 135 to 270 Package Dimensions unit : mm (typ) 7027-002 1.6 1.6 0.75 0.80.4 0.4 0.50.5 0.6 0.2 0.30.1 0 to 0.1

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1 : Base 2 : Emitter 3 : Collector SANYO : SMCP hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE Collector Current, IC -- mA Gain-Bandwidth Product, fT -- GHz fT -- IC 100 ITR08213 35 321.0 73520.1 72 10 5 7 100 VCE=5V IT14098 1.0 23 3 57 10 52 1.0 VCE=5V VCE=1V

No. A1075-3/6 ⏐S21e⏐2 -- IC Collector Current, IC -- mA Forward Transfer Gain,⏐S21e⏐2 -- dBCollector Dissipation, PC -- mW PC -- Ta Ambient Temperature, Ta -- °C Collector Current, IC -- mA Noise Figure, NF -- dB NF -- IC ⏐S21e⏐2 -- IC Collector Current, IC -- mA Forward Transfer Gain,⏐S21e⏐2 -- dB Collector Current, IC -- mA Noise Figure, NF -- dB NF -- IC ITR08219 VCE =5V 0 20 40 60 80 100 120 140 160 100 120 ITR08221 35 7 1.0 23 5 7 10 100 23 5 7 f=1.5GHz ITR08220 VCE =5V 35 7 1.0 23 5 7 10 100 23 5 7 f=1GHz f=1.5GHz 23 2 2 357 1.00.1 1053 5 VCE =1V 5V ITR08217 VCE=2V f=1GHz 23 2 2 35 7 1.00.1 10 53 5 ITR08218 Cre -- VCB Collector-to-Base V oltage, VCB -- V Reverse Transfer Capacitance, Cre -- pF Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cre -- pF ITR08215 f=1MHz ITR08216 f=1MHz 35 321.0 73520.1 772 10 5 35 321.0 73520.1 772 10 5 1.0 0.1 1.0 0.1

No. A1075-4/6 S Parameters S11e f=200MHz to 2000MHz(200MHz Step) S21e f=200MHz to 2000MHz(200MHz Step) S12e f=200MHz to 2000MHz(200MHz Step) S22e f=200MHz to 2000MHz(200MHz Step) j50 j25 j10 0 10 --j10 --j25 --j50 --j100 --j150 --j200 --j250 j100 j150 j200 j250 100 150 25050 90° 120° 150° ±180° --150° --120° --90° --30° --60° 30° 90° 120° 150° ±180° --150° --120° --90° --30° --60° 60° 30° j50 j25 j10 0 10 25 --j10 --j25 --j50 --j100 --j150 --j200 --j250 j100 j150 j200 j250 100 150 250 ITR08222 ITR08223 ITR08224 ITR08225 0.2GHz 0.2GHz0.2GHz 0.2GHz VCE =5V IC=10mA VCE=5VIC=5mA VCE=2V IC=3mA VCE=1VIC=1mA 16 201284 2.0GHz2.0GHz2.0GHz 60° 2.0GHz 2.0GHz VCE =1V IC=1mA 0.2GHz 2.0GHz 2.0GHz 2.0GHz 2.0GHz 0.2GHz 0.2GHz0.2GHz VCE =5V IC=10mA VCE =5V IC=5mA 2.0GHz VCE=1VIC=1mA VCE =2V IC=3mA 2.0GHz 2.0GHz2.0GHz2.0GHz0.2GHz 0.2GHz 0.2GHz 0.2GHz VCE=5V IC=10mA VCE=5V IC=5mA VCE=2V IC=3mA VCE=1V IC=1mA2.0GHz 2.0GHz 0.2GHz 0.2GHz 0.2GHz0.2GHz VCE=5V IC=5mAVCE=5V IC=10mA VCE=2V IC=3mA

No. A1075-5/6 S Parameters (Common emitter) VCE=5V , IC=5mA, ZO=50Ω VCE=5V , IC=10mA, ZO=50Ω VCE=2V , IC=3mA, ZO=50Ω VCE=1V , IC=1mA, ZO=50Ω

No. A1075-6/6 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. This catalog provides information as of October, 2008. Specifications and information herein are subject to change without notice. PS