2SC5265LS

2SC5265LS SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• High breakdown voltage(VCBO =1200V).
• High reliability(Adoption of HVP process).
• Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 1200 V Collector-to-Emitter Voltage V CEO 600 V Emitter-to-Base Voltage V EBO 9V Collector Current I C 4A Collector Current (Pulse) I CP 8A Collector Dissipation P C Tc=25°C3 0 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB =600V, IE=0 10 µA ICES VCE =1200V, RBE =0 1.0 mA Collector-to-Emitter Sustain Voltage VCEO (sus) IC =100mA, IB=0 600 V Emitter Cutoff Current I EBO VEB =9V, IC =0 1.0 mA Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SC5265LS Inverter-Controlled Lighting Applications Package Dimensions unit : mm 2079D [2SC5265LS]

11502 TS IM TA-3430 / 20599 TH (KT) / 40196 TS (KOTO) TA-0644

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Triple Diffused Planar Silicon Transistor 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS) 16.014.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.20.9 0.75 0.6 1.2 4.5 2.8 123 10.0 3.2

No.5321-2/4 ITR08010 IC -- VBE V CE =5V 100 ITR08011 hFE -- IC 3535 35 72 0.1 72 1.0 7 V CE =5V Ta=120 --40 Ta=120°C 25°C --40°C ITR08008 ITR08009 IC -- VCE 0246 8 1 0 IB =0 VCE (sat) -- IC 0.1 23 2 53 5 3 57 1.077 0.1 1.0 IC / IB =5 Ta= --40°C 25°C 120°C 0.8A 0.6A 0.4A 0.2A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation VoltageVCE (sat) I C =2.0A, IB=0.4A 1.0 V Base-to-Emitter Saturation Voltage V BE (sat) I C =2.0A, IB=0.4A 1.5 V DC Current Gain hFE 1V CE =5V, IC =0.3A 30 40 50 hFE 2V CE =5V, IC =1.5A 10 Storage Time t stg IC =2.0A, IB1=0.4A, IB2=--0.8A 2.5 µs Fall Time t f IC =2.0A, IB1=0.4A, IB2=--0.8A 0.15 µs Switching Time Test Circuit IB1 IB2 VOUT VCC IB1 IB2 VOUT VOUT 0.9 0.1 VOUT R C tstg tf

No.5321-3/4 0 20 40 60 80 100 120 140 160 0.4 0.8 1.6 2.0 2.4 1.2 PC -- Ta ITR08017 ITR08014 ITR08015 ITR08016 Forward Bias A S O 10ms1ms 2 2323 5 5 3757 100 71000 1.0 0.1 0.01 ICP =8A IC =4A DC operation 300 µs PC =30W 100 µs Reverse Bias A S O 2 53100 275 7 1000 1.0 0.1 L=200 µH IB2 = --1A Tc=25°C Single pulse 7 0.1 7 1.0535 322 7 1.0 0.1 ITR08012 SW Time -- IC V CC =200V IC / IB1 =5 IB2 / IB1 =2 R load V CC =200V IC =2.0A IB1 =0.4A R load ITR08013 tstg tf 7 0.1 7 1.053322 1.0 0.1 SW Time -- IB2 tstg tf 0 20 40 60 80 100 120 140 160 PC -- Tc ITR08018 VBE (sat) -- IC 0.1 23 2 53 5 3 57 1.077 0.1 1.0 IC / IB =5 Ta= --40°C 25°C 120°C PT<50µs No heat sink Tc=25°C Single pulse Collector Current, IC -- A Switching Time, SW Time -- µs Switching Time, SW Time -- µs Base Current, IB2 -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W Collector Dissipation, PC -- W Case Temperature, Tc -- °C Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V

No.5321-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2002. Specifications and information herein are subject to change without notice. PS