2SC5265 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC5265
DESCRIPTION
- HighBreakdownVoltage-(Vcb=1200V) HighReliability AdoptionofMBITproces
APPLICATIONS
- Inverter-controlled Lighting ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 1200 V VCEO Collector-EmitterVoltage 600 V VEBO Emitter-BaseVoltage 9 V IC CollectorCurrent-Continuous 4 A ICM CollectorCurrent-Peak 8 A PC CollectorPowerDissipation @TC=25℃ 30 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC5265 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-EmitterSustainingVoltage IC=10mA;IB=0 600 V VCE(sat) Collector-EmitterSaturationVoltage IC=2A;IB=0.4A 1.0 V VBE(sat) Base-EmitterSaturationVoltage IC=2A;IB=0.4A 1.5 V ICES CollectorCutoffCurrent VCE=1200V;RBE=0 1.0 mA ICBO CollectorCutoffCurrent VCB=600V;IE=0 10 uA IEBO EmitterCutoffCurrent VEB=9V;IC=0 1.0 mA hFE-1 DCCurrentGain IC=0.3A;VCE=5V 30 50 hFE-2 DCCurrentGain IC=1.5A;VCE=5V 10