2SC5243 PANASONIC

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n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time Symbol I CBO IEBO hFE V CE(sat) V BE(sat) fT tstg tf Conditions V CB = 1700V , IE = 0 V EB = 5V , IC = 0 V CE = 5V , IC = 10A IC = 10A, IB = 2.8A IC = 10A, IB = 2.8A V CE = 10V , IC = 0.1A, f = 0.5MHz IC = 12A, IB1 = 2.4A, IB2 = –4.8A, Resistance loaded min typ 1.5 0.12 max 1.5 2.5 0.2 Unit mA mA V V MHz ms ms 2SC5243 Silicon NPN triple diffusion mesa type For horizontal deflection output n Features l High breakdown voltage, and high reliability through the use of a glass passivation layer l High-speed switching l Wide area of safe operation (ASO) n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Peak base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CES V EBO IC ICP * IBP PC Tj Tstg Ratings 1700 1700 200 3.5 150 –55 to +150 Unit V V V A A A W TC =25°C Ta=25°C *Non-repetitive peak Unit: mm 1:Base 2:Collector 3:Emitter TOP–3L Package 20.0–0.5 6.010.0 26.0–0.520.0–0.5 1.52.5 Solder Dip 10.9–0.5 123 2.0–0.3 3.0–0.3 1.0–0.2 5.0–0.3 3.0 4.02.0 5.45–0.3 0.6–0.2 1.5 2.7–0.3 1.5 2.0 f 3.3–0.2 3.0

PC —T a I C —V CE hFE —I C V CE(sat)—I C V BE(sat)—I C Area of safe operation, horizontal operation ASO R th(t)—t 0 160 40 120 80 14020 100 60 240 200 160 120 220 180 140 100 (1) (3) (2) (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) Without heat sink (PC =3.0W) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 TC =25˚C 200mA 600mA 400mA 800mA IB=1000mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.1 1 10 0.1 100 1000 TC =100˚C 25˚C –25˚C VCE =5V Collector current IC (A) Forward current transfer ratio hFE 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3 100 IC /IB=3.5 100˚C25˚C TC =–25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 100 0.01 0.1 100 IC /IB=3.5 TC =–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0 2000 1600400 1200800 f=64kHz, TC =25˚C Area of safe operation for the single pulse load curve due to discharge in the high-voltage rectifier tube during horizontal operation <1mA Collector to emitter voltage VCE (V) Collector current IC (A) 10–4 1010–3 10–110–2 11 0 3102 104 0.01 0.1 1000 100 Note: Rth was measured at Ta=25˚C and under natural convection (1) PT=10V · 0.3A (3W) and without heat sink (2) PT=10V · 1.0A (10W) and with a 100 · 100 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)