2SC5239 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5239
DESCRIPTION
- With TO-220C package
- High voltage,high speed switching
APPLICATIONS
- For switching regulator and general purpose applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 550 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-Peak 6 A IB Base current 1.5 A PC Collector dissipation TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5239 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ;IB=0 550 V VCEsat Collector-emitter saturation voltage I C=1A ;IB=0.2A 0.5 V VBEsat Base-emitter saturation voltage I C=1A ;IB=0.2A 1.2 V ICBO Collector cut-off current V CB=800V ;IE=0 100 μA IEBO Emitter cut-off current V EB=7V; IC=0 100 μA hFE DC current gain I C=1A ; VCE=4V 10 30 fT Transition frequency I E=-0.25A ; VCE=12V 6 MHz Cob Collector output capacitance f=1MHz ; V CB=10V 35 pF Switching times ton Turn-on time 0.7 μs ts Storage time 4.0 μs tf Fall time IC=1A; IB1=0.15A ;IB2=-0.45A VCC=250V; RL=250Ω 0.5 μs
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5239 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5239