2SC5227 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

INCHANGE Semiconductor isc RF Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN RF Transistor 2SC5227

DESCRIPTION

  • High Gain Bandwidth Product fT = 7 GHz TYP.
  • High Gain, Low Noise Figure ︱S21e︱2 = 12 dB TYP., NF = 1.0 dB TYP @ f = 1 GHz

APPLICATIONS

  • Designed for VHF~UHF wideband low noise amplifier applications. ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 70 mA PC Collector Power Dissipation @TC=25℃ 0.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃

INCHANGE Semiconductor isc RF Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN RF Transistor 2SC5227

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current V CB= 10V; IE= 0 1 μA IEBO Emitter Cutoff Current V EB= 1V; IC= 0 10 μA hFE DC Current Gain I C= 20mA ; VCE= 5V 60 270 ︱S21e︱2 Insertion Power Gain I C= 20mA ; VCE= 5V; f= 1GHz 9 12 dB ︱S21e︱2 Insertion Power Gain I C= 3mA ; VCE= 2V; f= 1GHz 8 dB fT Current-Gain—Bandwidth Product I C= 20mA ; VCE= 5V 5 7 GHz COB Output Capacitance I E= 0 ; VCB= 10V;f= 1.0MHz 0.75 1.2 pF Cre Feedback Capacitance I E= 0 ; VCB= 10V;f= 1.0MHz 0.5 pF NF Noise Figure I C= 7mA ; VCE= 5V;f= 1GHz 1.0 1.8 dB ‹ hFE Classification 3 4 5 60-120 90-180 135-270

INCHANGE Semiconductor isc RF Product Specification 3isc website：www.iscsemi.cn isc Silicon NPN RF Transistor 2SC5227 TYPCIAL CHARACTERISTICS (Ta=25℃) DC Current Gain vs. Collector Current 100 150 200 0.1 1 10 100 Collectot current IC(mA) DC Current Gain HFE Total Power Dissipation vs. Ambient Temperature 100 150 200 250 25 50 75 100 125 150 Ambient TemeperatureTA( ℃ ) Total Power DissipationPtd(mW) Gain Bandwidt h P roduct Vs.Colllector Current 1 10 100 Collector Current Ic(mA) Gain Bandwidth Product fT(GHz) Insertion Pow er Gain Vs. Collector Current 1 10 100 Collector Current Ic(mA) Insertion Power Gain ( | S21|2)(dB) Noise Figure vs.Collector C 1 10 100 Collector Current Ic(mA) Noise Figure NF(dB) Insertion Power Gain and Maximum Unilateral Power Gain vs. Frequency 0.1 1 10 Frequency(GHz) Insertion power gain ︱S21︱ (dB) maximum unilateral power gainGUM(dB)

INCHANGE Semiconductor isc RF Product Specification isc website：www.iscsemi.cn 4 isc Silicon NPN RF Transistor 2SC5227 SMITH CHART （Test Condition：VCE=10V, I C=20mA , Z O=50Ω，f= 0.2GHz-2.0GHz） S11、S22 -FREQUENCY S21-FREQUENCY Condition：Vce=10V/Ic=20mA 2GHz 0.2GHz 90° 60° 30° -30° -60° -90° -120° -150° 180° 150° 120° S12- FREQUENCY Condition：Vce=10V,Ic=20mA 0.2GHz 0.05 0.1 0.15 0.2 0.25 90° 60° 30° 2GHz0 -30° -60° -90° -120° -150° 180° 150° 120°

INCHANGE Semiconductor isc RF Product Specification 5isc website：www.iscsemi.cn isc Silicon NPN RF Transistor 2SC5227 S-PARAMETER VCE = 10 V, IC = 20 mA Freque. S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG VCE = 10 V, IC = 5 mA Freque. S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG