2SC5226A-D SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 8

Technical content

Features

  • Low-noise : NF=1.0dB typ (f=1GHz)
  • High gain : ⏐S21e⏐ =12dB typ (f=1GHz)
  • High cut-off frequency : f T=7GHz typ Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 20 V Collector-to-Emitter Voltage V CEO 10 V Emitter-to-Base Voltage V EBO 2V Collector Current I C 70 mA Collector Dissipation P C 150 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7023A-009

71812 TKIM/51408AB TIIM TC-00001340

NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifi er Applications http://semicon.sanyo.com/en/network Product & Package Information

  • Package : MCP
  • JEITA, JEDEC : SC-70, SOT-323 Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection LN LOT No. LOT No. RANK TL 1 : Base 2 : Emitter 3 : Collector SANYO : MCP 2.0 0.4250.4250.3 0.65 2.10.9 1.25 0.3 0.2 0 to 0.08 0.15 2SC5226A-4-TL-E 2SC5226A-5-TL-E

No. A1062-2/8 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=10V, IE=0A 1.0 μA Emitter Cutoff Current I EBO VEB=1V, IC=0A 10 μA DC Current Gain h FE VCE=5V, IC=20mA 60* 270* Gain-Bandwidth Product f T VCE=5V, IC=20mA 5 7 GHz Output Capacitance Cob VCB=10V, f=1MHz 0.75 1.2 pF Reverse Transfer Capacitance Cre 0.5 pF Forward Transfer Gain ⏐S21e⏐ 1V CE=5V, IC=20mA, f=1GHz 9 12 dB ⏐S21e⏐ 2V CE=2V, IC=3mA, f=1GHz 8 dB Noise Figure NF V CE=5V, IC=7mA, f=1GHz 1.0 1.8 dB * : The 2SC5226A is classifi ed by 20mA hFE as follows : Rank 3 4 5 hFE 60 to 120 90 to 180 135 to 270

Ordering Information

Device Package Shipping memo 2SC5226A-4-TL-E MCP 3,000pcs./reel Pb Free 2SC5226A-5-TL-E MCP 3,000pcs./reel hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE Cre -- VCB Collector-to-Base V oltage, VCB -- V Reverse Transfer Capacitance, Cre -- pF Collector Current, IC -- mA Gain-Bandwidth Product, fT -- GHz fT -- IC Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cre -- pF ITR07921 f=1MHz ITR07922 f=1MHz ITR07919 35 321.0 73520.1 772 10 35 321.0 73520.1 772 10 1.0 0.1 1.0 0.1 ITR07920 23 3 577 101.0 7 100522 1.0 VCE=5V 100 3 5 321.0 73 5 72 2 10 5 7 100 VCE=5V

No. A1062-3/8 ⏐S21e⏐2 -- IC Collector Current, IC -- mA Forward Transfer Gain,⏐S21e⏐2 -- dBCollector Dissipation, PC -- mW PC -- Ta Ambient Temperature, Ta -- °C Collector Current, IC -- mA Noise Figure, NF -- dB NF -- IC 35 321.0 735 72 2 10 5 7 100 VCE=5V f=1GHz ITR07923 35 7 1.0 23 5 7 10 100 22 35 7 f=1GHz ITR07924 0 20 40 60 80 100 120 140 160 100 120 140 160 150 ITR07925 VCE =5V VCE =2V

No. A1062-4/8 f=100MHz, 200MHz to 2000MHz(200MHz Step) f=100MHz, 200MHz to 2000MHz(200MHz Step) f=100MHz, 200MHz to 2000MHz(200MHz Step) f=100MHz, 200MHz to 2000MHz(200MHz Step) j50 j25 j10 0 10 --j10 --j25 --j50 --j100 --j150 --j200 --j250 j100 j150 j200 j250 100 150 250 VCE=2V IC=3mA 90° 120° 150° ±180° --150° --120° --90° --30° --60° 60° 30° 16 201284 0.1GHz 0.1GHz 2.0GHz VCE=5V IC=20mA 90° 120° 150° ±180° --150° --120° --90° --30° --60° 60° 30° 0.04 0.08 0.160.12 0.1GHz j50 j25 j10 0 10 25 --j10 --j25 --j50 --j100 --j150 --j200 --j250 j100 j150 j200 j250 100 150 250 2.0GHz VCE=5V IC=7mA ITR07926 ITR07927 ITR07928 ITR07929 0.1GHz 0.1GHz 2.0GHz 2.0GHz VCE=5V IC=7mA 0.1GHz 2.0GHz 2.0GHz 2.0GHz 2.0GHz 2.0GHz VCE=5V IC=20mA VCE=5V IC=7mA0.1GHz 0.1GHz VCE=5V IC=20mA2.0GHz 2.0GHz 2.0GHz VCE=5V IC=20mA VCE=5V IC=7mA 0.1GHz 0.2 VCE=2V IC=3mA VCE=2V IC=3mA VCE=2V IC=3mA

No. A1062-5/8 S Parameters (Common emitter) VCE=5V , IC=7mA, ZO=50Ω VCE=5V , IC=20mA, ZO=50Ω VCE=2V , IC=3mA, ZO=50Ω

No. A1062-6/8 Embossed Taping Specifi cation 2SC5226A-4-TL-E, 2SC5226A-5-TL-E

No. A1062-7/8 Outline Drawing Land Pattern Example 2SC5226A-4-TL-E, 2SC5226A-5-TL-E Mass (g) Unit 0.006 * For reference mm Unit: mm 0.65 0.65 2.1 0.7 1.0

PS No. A1062-8/8 This catalog provides information as of July, 2012. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.