2SC5223 PANASONIC

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Technical content

Silicon NPN triple diffusion planar type For high-speed switching n Features l High collector to base voltage VCBO l High collector to emitter VCEO n Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC =25°C) Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 500 500 2.0 1.0 150 –55 to +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol ICBO IEBO V CBO V CEO V EBO hFE1 hFE2 V CE(sat) V BE(sat) Conditions V CB = 400V, IE = 0 V EB = 5V , IC = 0 IC = 100mA, IE = 0 IC = 1mA, IB = 0 IE = 10mA, IC = 0 V CE = 5V , IC = 50mA V CE = 5V , IC = 330mA IC = 330mA, IB = 33mA IC = 330mA, IB = 33mA min 500 500 100 100 typ max 100 1.0 1.5 Unit mA mA V V V V V Unit: mm 1:Base 2:Collector 3:Emitter U Type Package 6.5–0.1 5.3–0.1 4.35–0.1 4.6–0.1 2.3–0.1 0.75–0.1 123 0.93–0.1 2.5–0.1 0.8max 1.0–0.2 7.3–0.1 1.8–0.1 2.3–0.1 0.5–0.1 0.5–0.1 0.1–0.05 1.0–0.1 6.5–0.2 2.3 5.35 4.35 13.3–0.3 2.3–0.1 5.5–0.26.0 1.8 0.75 0.6 2.3 0.5–0.1 1:Base 2:Collector 3:Emitter EIAJ:SC–63 U Type Package (Z) Unit: mm

PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C C ob —V CB 0 200 16040 120 80 Without heat sink Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 06 5413 2 600 500 400 300 200 100 Ta=25˚C 5mA 4mA 3mA 2mA 1mA IB=6mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.001 0.003 0.01 0.03 0.1 0.3 IC /IB=10 –25˚C 25˚C TC =100˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.03 0.1 0.3 100 IC /IB=10 TC =–25˚C 25˚C100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 600 500 400 300 200 100 TC =100˚C 25˚C –25˚C VCE =5V Collector current IC (A) Forward current transfer ratio hFE 1 10 100 10003 30 300 120 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)