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Technical content
Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing n Features l High transition frequency fT. l Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.950.95 1.9–0.2 0.4 +0.1 –0.05 1.1 +0.2 –0.10.8 0.4–0.2 0 to 0.1 0.16 +0.1 –0.06 1.45 0.1 to 0.3 2.9 +0.2 –0.05 Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings 200 150 –55 ~ +150 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Emitter cutoff current Collector to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Collector output capacitance Common emitter reverse transfer capacitance Power gain hFE ratio Symbol IEBO V CBO hFE V CE(sat) V BE fT C ob C rb PG hFE(RATIO) Conditions V EB = 2V , IC = 0 IC = 100mA, IE = 0 V CE = 4V , IC = 2mA IC = 20mA, IB = 4mA V CE = 4V , IC = 2mA V CB = 10V , IE = –15mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz V CB = 6V , IE = 0, f = 1MHz V CB = 10V , IE = –10mA, f = 200MHz V CE = 4V , IC = 100mA V CE = 4V , IC = 2mA min 100 0.8 0.6 0.6 typ 0.7 1.3 1.0 0.4 max 350 0.5 1.9 1.4 1.5 Unit mA V V V GHz pF pF dB Marking symbol :FB
PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC C ob — V CB 0 160 40 120 80 14020 100 60 250 200 150 100 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 06 5413 2 120 100 Ta=25˚C 400mA 200mA 500mA 300mA 100mA IB=600mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 120 100 VCE =4V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 1 10 100 10003 30 300 0.001 0.003 0.01 0.03 0.1 0.3
10 IC /IB=5
Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 300 250 200 150 100 VCE =4V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 1 3 10 30 100 3.0 2.5 2.0 1.5 1.0 0.5 f=1MHz IE=0 Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)