2SC5197 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5197
DESCRIPTION
- Low Collector Saturation Voltage- : V CE(sat)= 2.0V(Min) @IC= 6A
- Good Linearity of hFE
- Complement to Type 2SA1940
APPLICATIONS
- Power amplifier applications
- Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB B Base Current-Continuous 0.8 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5197
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 120V ; IE= 0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 μA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 55 160 hFE-2 DC Current Gain IC= 4A ; VCE= 5V 35 COB Output Capacitance IE= 0; VCB= 10V;ftest= 1.0MHz 120 pF fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V 30 MHz hFE-1 Classifications R O 55-110 80-160 isc Website：www.iscsemi.cn 2
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5197 isc Website：www.iscsemi.cn