2SC5161 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Low VCE(sat). VCE(sat) = 0.15V (Typ.),IC /I B =1 A/0 . 2 A High breakdown voltage.VCEO =4 0 0 V Fast switching.tr = 1.0ìs,IC =0 . 8 A NPN silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage V CBO 400 V Collector to emitter voltage V CES 400 V Emitter to base voltage V EBO 7V Peak collector current * I CP 4 A(Puse) Collector current I C 2 A(DC) Collector power dissipation T C =2 5 10 Ta = 25 1 Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 * Single pulse pw=10ms PC W
www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage B VCBO IC=50ìA 400 V collector-emitter breakdown voltage B VCEO IC=1mA 400 V collector-emitter voltage V CEO(SUS) IC=1.0A,IB1=0.1A,L=1mH 400 V Emitter-base breakdown voltage B VEBO IE=50ìA 7 V collecotr cutoff current I CBO VCB=400V 10 ìA Emitter cutoff current I EBO VEB=7V 10 ìA Collector to emitter saturation voltage V CE(sat) IC/IB=1A/0.2A 1 V Base to emitter saturation voltage V BE(sat) IC/IB=1A/0.2A 1.5 V DC current transfer ratio h FE VCE=5V,IC=0.1A 25 50 Transition frequency f T VCE=10V.IE=-0.1A.f=5MHz 10 MHz Output capacitance cob V CB=10V,IE=0A,f=1MHz 30 pF Turn-on time t on IC=0.8A,RL=250Ù 1ì s Storage time t stg IB1=-IB2=0.08A 2.5 ìs Fall time t f VCC=200V 1 ìs hFE Classification ltem B h F E 2 5t o5 0 2SC5161