2SC5155 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
- High current capacity. + Adoption of MBIT process. - High DC current gain. - Low collector-to-emitter saturation voltage. - High Vepo. Absolute Maximum Ratings at Ta=25°C unit Collector-to-Base Voltage Voso 50 OV Collector-to-Emitter Voltage Voro 20 Vv Emitter-to-Base Voltage VeBo 15 Vv Collector Current Ic 3°«OA Collector Current (Pulse) Icp 6 A Base Current Ip 06 A Collector Dissipation Po 1 WwW Te=25°C 20 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current Iczo Vop=30V Ig=0 100 nA Emitter Cutoff Current IEBo Vep=10V,Ig=0 100 nA DC Current Gain hrEqa) Vor=2V,I¢=500mA 800 1500 3200 hpga) Voe=2V,Io=2A 500 Gain-Bandwidth Product fp Voe=2V,I¢=500mA 260 MHz Output Capacitance Cob Vcp=10V, f=1MHz 35 pF C-E Saturation Voltage Vewsat) Ic=2A,1gp=20mA 0.15 05 V B-E Saturation Voltage VeEat) Io=2A,[p=20mA 0.85 #12 V C-B Breakdown Voltage Viercso Ic=10¢AJg=0 50 v C-E Breakdown Voltage Vesriceo Ic=1mA,Rgp= © 20 v E-B Breakdown Voltage Vipreso Ig=10zA,Ic=0 15 Vv Turn-ON time ton See specified Test Circuit. 0.14 HS Storage Time tstg o 1.5 #S Fall Time te ” 0.12 us Switching Time Test Circuit Package Dimensions 2045A Package Dimensions 2044A (unit:mm) ,, 2, (unit : mm) Ips —$— ven Be ee te He - inn ~ AB 3 2 et ocg 4x . . } rary bps ara 123 s00TBs=-100Tg2"Ic=14 saqpfopas 4; Steer 4 Saleen SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 93094TS (KOTO) BX-0950 No.4802-1/3
Ic = Vee a5 7 7 oP) 4 omA AEE eo Sco ee || reo os UZE snk | J 4 ier See Ay ae Saee AGesea: eee oa ne i =a : pe hn ae rt Sis aa Cee] ceSeeetit Pp i: acne: Sooo un /SREOES » THe LT peer tS $ ta ee ® x“ Collector-to-Emittter Voltage, Vcg © Collector-to-Emittter Voltage,Vog —V mae se COC ee] oe Pree rr TT aa wale e Pomme p Poe pot) jee ia |_| a Fa $s ' | _ gif iT a J 1 | ee HHH “Ey Cri LZ i ‘ i t eVer-V ore Collector Curcentlg — ° Gase-to.Bmittter Voltage Vor —V orca : a" ae Co ; immense oe — | 3 Too Th PHONG TDA NG ¢ | | “A : P ERS Preto Bote EPS a oi TE STO ' Jase Voir onl oe * collects Current — ma ors Collector-to-Base Voltage, Vcg - V Noe te es . OTe ead rT Ty TT L penned . i " Too Tree PTE ate tec i setae i im TTT : LIA CG. at | a Toa ee aes u GE Tolman LE arasainsal i At | TT TTT ° Ci “= ° Collector Currentlg — mA | “0 Collector Current,Ig — mA os ! — I a all
Ss $< ASO Pe ~ Ta eS ETT TT TT PT yi RS | b+ Seg | TAT] ofa N ee Ai eg, +1 TAN g Na Fy a 2a AN 3 ai ad} tit NTN bss Fr ae Se 1 || gy TTP TPN TT gm a aq. ae 3 Cs em N 10 70 020 —« 1260 Collector-to-Emittter Voltage, Vop — V Ambient Temperature, Ta — °C Po - : ae L. aa B 20 Lt LL! 16] IS J COOSA Baal X Ba 5 8 o 2 4 6 60 10 120 uo 160 Case Temperature,Te ~ °C MNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power contro! systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO. LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD. its affilates, subsidiaries and distributors or any of their officers and employees jointly or severally. WM Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.4802-3/3