2SC5128 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

iscWebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC5128

DESCRIPTION

  • Collector–Emitter Breakdown Voltage :V(BR)CEO=500V(Min)
  • High SpeedSwitching
  • Full-packpackage with outstandinginsulation, which canbe instaledtothe heat sink with one screw
  • 100% avalanche tested
  • Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation

APPLICATIONS

  • Designedforswitchingregulatorandgeneralpurpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 800 V VCEO Collector-EmitterVoltage 500 V VEBO Emitter-BaseVoltage 8 V IC CollectorCurrent-Continuous 5 A ICM CollectorCurrent-peak 10 A IB BaseCurrent 3 A PC CollectorPowerDissipation TC=25℃ 40 W Ti JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃

iscWebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC5128 ELECTRICALCHARACTERISTICS TC =25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=25mA;IB=0 500 V VCE(sat) Collector-EmitterSaturationVoltage IC=2A;IB=0.4A 1.0 V VBE(sat) Base-EmitterSaturationVoltage IC=2A;IB=0.4A 1.5 V ICBO CollectorCutoffCurrent VCB=600V; IE=0 0.1 mA IEBO EmitterCutoffCurrent VEB=5V;IC=0 0.1 mA hFE-1 DCCurrentGain IC=2A;VCE=5V 8 hFE-2 DCCurrentGain IC=0.1A;VCE=5V 15 fT Current-Gain—BandwidthProduct IE=-0.5A;VCE=10V 20 MHz SwitchingTimes ton Turn-OnTime IC=2A;VCC=200V;RL=100Ω IB1=0.4A;IB2=-0.8A; 1.0 μs ts StorageTime 3 μs tf FallTime 0.3 μs