2SC5127 PANASONIC

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2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching n Features l High-speed switching l High collector to base voltage VCBO l Wide area of safe operation (ASO) l Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CES V CEO V EBO ICP IC IB PC Tj Tstg Ratings 800 900 800 900 500 3.0 1.5 0.5 150 –55 to +150 Unit V V V V A A A W 2SC5127 2SC5127A 2SC5127 2SC5127A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 hFE2 V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = 800V, IE = 0 V CB = 900V, IE = 0 V EB = 5V , IC = 0 IC = 10mA, IB = 0 V CE = 5V , IC = 0.1A V CE = 5V , IC = 0.6A IC = 0.6A, IB = 0.17A IC = 0.6A, IB = 0.17A V CE = 10V , IC = 0.1A, f = 1MHz V CC = 200V min 500 typ max 100 100 100 1.0 1.5 1.0 3.0 0.3 Unit mA mA V V V MHz ms ms ms 2SC5127 2SC5127A Unit: mm 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package 9.9–0.3 231 4.6–0.2 2.9–0.2 2.6–0.1 2.54–0.2 0.75–0.1 1.2–0.15 5.08–0.4 15.0–0.313.7 +0.5 –0.2 f3.2–0.1 3.0–0.2 8.0–0.24.1–0.2 Solder Dip 1.45–0.15 0.7–0.1

Power Transistors 2SC5127/2SC5127A PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C C ob —V CB fT —I C ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) (3) (4) (2) (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) With a 50 · 50 · 2mm Al heat sink (4) Without heat sink (PC =2W) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 1.2 1.0 0.8 0.6 0.4 0.2 TC =25˚C 100mA 80mA 60mA 40mA 20mA 10mA IB=150mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=5 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.1 100 0.3 IC /IB=5 TC =–25˚C 25˚C100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 1000 100 300 VCE =5V –25˚C TC =100˚C 25˚C Collector current IC (A) Forward current transfer ratio hFE 1 3 10 30 100 1000 100 300 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.01 0.03 0.1 0.3 1 0.1 100 0.3 VCE =10V f=1MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 0 2.0 0.5 1.5 1.0 0.01 0.03 0.1 0.3 100 tstg tf ton Pulsed tw =1ms Duty cycle=1% I C /IB=3.5 (2IB1=–IB2) VCC =200V TC =25˚C Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.001 0.003 0.01 0.03 0.1 0.3

10 Non repetitive pulse

TC =25˚C 10ms DC 1ms t=0.5ms Collector to emitter voltage VCE (V) Collector current IC (A)

Power Transistors 2SC5127/2SC5127A Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 0.1 100 10000 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V · 0.2A (2W) and without heat sink (2) PT=10V · 1.0A (10W) and with a 100 · 100 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W) 0 800 200 600 400 700100 500 300 4.0 3.0 1.0 2.5 3.5 2.0 0.5 1.5 Lcoil=180µH IC /IB=5 (IB1=–IB2) TC <100˚C Collector to emitter voltage VCE (V) Collector current IC (A) L coil ICIB1 Vin tW –IB2 Vclamp VCC T.U.T