2SC5063 PANASONIC

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Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching n Features l High-speed switching l High collector to base voltage VCBO l Wide area of safe operation (ASO) l N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CES V CEO V EBO ICP IC IB PC Tj Tstg Ratings 500 500 400 1.5 0.5 1.3 150 –55 to +150 Unit V V V V A A A W TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 hFE2 V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = 500V, IE = 0 V EB = 5V , IC = 0 IC = 10mA, IB = 0 V CE = 5V , IC = 0.1A V CE = 5V , IC = 0.8A IC = 0.8A, IB = 0.16A IC = 0.8A, IB = 0.16A V CE = 10V , IC = 0.2A, f = 10MHz V CC = 150V min 400 typ max 100 100 1.5 0.7 0.3 Unit mA mA V V V MHz ms ms ms Unit: mm 1:Base 2:Collector 3:Emitter N Type Package 8.5–0.2 6.0–0.5 10.0–0.310.5min. 2.0 1.5–0.1 1.5max. 0.8–0.1 5.08–0.5 2.54–0.3 1.1max. 0.5max. 1.0–0.1 3.4–0.3 213 Unit: mm 8.5–0.2 4.4–0.5 2.0 10.0–0.3 14.7–0.5 4.4–0.5 6.0–0.3 3.4–0.3 2.54–0.3 5.08–0.5 1.0–0.1 0.8–0.1 1.5 –0.4 3.0 +0.4 –0.2 0 to 0.4 1.1 max. R0.5 R0.5 123 1:Base 2:Collector 3:Emitter N Type Package (DS)

PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C C ob —V CB ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) (3) (2) (1) TC =Ta (2) With a 50 · 50 · 2mm Al heat sink (3) Without heat sink (PC =1.3W) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 0 826 4 2.0 1.6 1.2 0.8 0.4 1.8 1.4 1.0 0.6 0.2 TC =25˚C 10mA 20mA 30mA 40mA 60mA 80mA 100mA 120mA IB=200mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.1 10.03 0.3 0.01 0.1 0.03 0.3 IC /IB=5 –25˚C 25˚C TC =100˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 3 10.10.03 0.3 0.01 0.03 0.1 0.3 IC /IB=5 TC =–25˚C25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 10.03 0.3 1000 100 300 VCE =5V TC =100˚C –25˚C 25˚C Collector current IC (A) Forward current transfer ratio hFE 0.1 0.3 100 300 1000 VCE =10V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 0.1 1 10 1000.3 3 30 100 300 1000 3000 10000 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.01 0.03 0.1 0.3 100 tstg tf ton Pulsed tw =1ms Duty cycle=1% I C /IB=5 (2IB1=–IB2) VCC =150V TC =25˚C Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C IC 10ms 300ms 1ms t=0.5ms Collector to emitter voltage VCE (V) Collector current IC (A)

Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 102 (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W) 0 800 200 600 400 700100 500 300 ICP IC Lcoil=200µH IC /IB1=5 (IB1=–IB2) TC =25˚C Collector to emitter voltage VCE (V) Collector current IC (A) L coil ICIB1 Vin tW –IB2 Vclamp VCC T.U.T