2SC5044 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
- High speed (tr=100ns typ) : High reliability (VP process). + High breakdown voltage (Vogo = 1600V). - Adoption of MBIT process. Absolute Maximum Ratings at Ta = 25°C unit Collector-to-Base Voltage Vcso 1600 Vv Collector-to-Emitter Voltage Vero 800 Vv Emitter-to-Base Voltage VeBo 6 Vv Collector Current Ic 10 A Collector Current (Pulse) Icp 25 A Collector Dissipation Po 3.0 W Te=25°C 70 WwW Junction Temperature Tj 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current Icpo Vop=800V Ig=0 10 yA Collector Cutoff Current Ions Vor =1600V,Ryp=0 1.0 mA Collector Sustain Voltage Verosus) I¢=100mA,I3=0 800 Vv Emitter Cutoff Current IgBo Vep=4V,Ic=0 1.0 mA C-E Saturation Voltage Vergat) Ic=8A,Ip=2A 5 OV B-E Saturation Voltage Vanicat) Ic=8A,lp=2A 15 V DC Current Gain hrge(1) Vor=5V,Ic=1A 15 25 hre(2) Vog=5Vlc=BA 4 7 Storage Time tate I¢=6A,Ipj =1.0A,Ipo= —3.0A 2.0 ps Fall Time te Ic=6A,Ig1 = 1.0A,Ip2= —3.0A 0.1 02 ys Switching Time Test Circuit Package Dimensions 2039C (unit : mm) bo 22.0 20.4 peeixe c OUTPUT so [ af .0 mn tas ey ==. fi INPUT Wr €) AL*3.30 3 Al Hemet! 2 (f] 502 I iio. (| He He 4.0 100uF 470eF 21.0 Vpee-2Vv Voc=200v re 4 1: Base avzozs ipo 2: Collector 3: Emitter . SANYO : TO-3PML SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN D2696TS/91294MT (KOTO) B8-0289 No.4782-1/3
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2 TN at 2 OES set
BUN IT TAS é +H FT HH = Fl [NT 2 TPO LC ac Se eee 8, | Poe we PTO) BSE Ss Ec 3 Las sg} NE RSIS) | BEES 3 3 2 Nt] be LETT Pee Hew sd OY a EEE EEE Tor 2 8 S749 2 3 STi 2 To, 2 3 5719 2 3 5 7? 109 Collector Current,Ig — A Ippo - A ee cee sie | NT NTN, cn TO EA Paaemeenenmean ae i ee < ONT NG TAN =p | SCA | ESE 4 23 pee OO PREY PES 3 s Zo. ~~ = at=s00,11 ae ieee NH “eet fe= 25" } Tox 5719 2 3 5 71m 2 3 57 ip 37 1 23 5 Tim 2 3 Collector-to-Emitter Voltage, Vcg — V Collector-to-Emitter Voltage,Vog — V ; No.4782-2/3
a SSSSeesSsesSeeesessSsssSSsSSSSSSSSSe - Po + ® Ta ee 70) 3.0] = FL IN TTT 1 | 60) 7 NC a & gro ga | NET TI 3 £40) Bis} ce 4 | 5 30 <t 3 10 B20 RN + : a 3 H Bost— ft 84 tt | PATS po ETT 9 5 ‘ a 0! NI 0 ano Oh 0 5 bo 0 20 40 60 80 10 120 %0 160 Ambient Temperature,Ta — °C Case Temperature,Te - °C II No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Aocept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, ; WM Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 1996, Specifications and information herein are subject to change without notice. a SSSSSSSSSSSSSSSSSSSSSSSSSSSSSSssSSSSSSSSeSeSeSeSeseeeeee No.4782-3/3