2SC5043 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
iscWebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC5043
DESCRIPTION
- NPNtriple diffusedplanarsilicontransistor
- HighBreakdown Voltage
- HighSwitching Speed
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
APPLICATIONS
- Veryhigh-definitionCRTdisplay horizontal deflection outputapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 1500 V VCEO Collector-EmitterVoltage 600 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 12 A ICP CollectorCurrent-Peak 24 A PC CollectorPowerDissipation @Ta=25℃ 2 W CollectorPowerDissipation @TC=25℃ 50 TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
iscWebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC5043 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-EmitterSustainingVoltage IC=10mA;IB=0 600 V VCE(sat) Collector-EmitterSaturationVoltage IC=8A;IB=2A 3.0 V VBE(sat) Base-EmitterSaturationVoltage IC=8A;IB=2A 1.5 V ICEO CollectorCutoffCurrent VCE=800V;RBE=0 100 uA IEBO EmitterCutoffCurrent VEB=5V;IC=0 10 uA hFE-1 DCcurrentgain IC=1A;VCE=5V 10 30 hFE-2 DCcurrentgain IC=8A;VCE=5V 4 8 COB OutputCapacitance IE=0;VCB=10V;ftest=1.0MHz 160 pF SwitchingTimes tstg StorageTime ICP=6A;IB1=1.5A;IB2=-1.5A 4 μs tf FallTime 0.3 μs