2SA1881 SANYO
Document overview
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Technical content
Features
+ Large current capacity. + Low collector to emitter saturation voltage. - Very small-sized package permitting 25A1881/2SC4983-applied sets to be made smaller and slimmer. ( ): 2SA1881 Absolute Maximum Ratings at Ta = 25°C unit Collector-to-Base Voltage Voso (-)15 Vv Collector-to-Emitter Voltage Vcgo (-)15 v Emitter-to-Base Voltage VeBo (-)5 v Collector Current. Ic (—)1 A Collector Current(Pulse) Icp (-)3 A Base Current Ip (-)200 mA Collector Dissipation Pc 250 mW Junction Temperature Tj 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current TcBo Vop=(—)12V,Ig=0 (-)100 nA Emitter Cutoff Current leBo Vep=(—)4V,Ic¢=0 (-)100 nA DC Current Gain hrg(1) Ver=(—)2V,I¢=(—)50mA 135K 600K hrg(2) VeEe=(—-)2V,I¢=(—)800mA 80 Gain-Bandwidth Product fy Voe=(—)2V,I¢=(—)50mA (300)200 MHz C-E Saturation Voltage Vegat(l) I¢=(—)5mA,Ip=(—)0.5mA (-)10 (-)25 mV Vewisat)(2) Ic =(—)500mA, Ip =(—)25mA (—)120(—)240 mV B-E Saturation Voltage VeE(sat) Ic=(—)500mA, Ip =(—)25mA (-)0.9 (-)12 V Output Capacitance Cob Vep=(—-)10V,f=1MHz (15)10 pF C-B Breakdown Voltage VercBo Ic=(-)10zA,Ig=0 (-)15 Vv C-E Breakdown Voltage Voerceo Ic=(—)1mA,Rpg= © (-)15 Vv E-B Breakdown Voltage Veereso Ig=(—)10zA,Ig=0 (~)5 v XX =: The 25A1881/2SC4983 are classified by 50mA hpg as follows: 135_5 270 200 6 400 300 7 600 Marking : 2SA1881 : IS Package Dimensions 2018B 2804983 : KN (unit:mm) os Tf . 1 19 2l 4) [hoe 29 = hl 1: Base 2: Emitter ] (| 3: Collector ET E0.4 SANYO: CP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 51694TH (KOTO) A8-9412 No.4661-1/4
: 25A1881/2SC4983 Ic - Vi . Ic - Ve E ~600 | —4mAYAS = 6c | dma 8-80 | — Ws i 2 500 Whi, i If i} tt to WA | a 7a 1 $s) YZ ||
10 LY Lt 100 Lf Pit Lt |
; Ane i | ie-0 | | | tf | Collector-to-Emitter Voltage, Vcp — V Collector-to-Emitter Voltage,Vcop — V 200 =p Ic_~ Vee 200 Ic_- Vee Com «-1o| 2058 an gg (fA a 3-120 pr S120 o.4mA. i —— E tse} fo) | Po 5 ae a a PTE) fama | i z 4 g + 2 aa EI | Poe Peer ASSES im ee A 0 -f 2 -3 -4 <5 ° 1 2 3 4 5 Collector-to-Emitter Voltage,Vcz - V Collector-to-Emitter Voltage, Vg — V Ic - VI Ic - Vp ead Tt 7 1 SShiBe 1000 | — : 2SC4983 g-m tT ry gem - : — ’ le vot i 2 is E § 3. | Fey 3 Dod is CO) SCE s s& LE EA Base-to-Emitter Voltage,Vag — V Base-to-Emitter Voltage,Vap — V oe “ooo 28A1881 [J] ] 2804983 TOE Vor=~2V TE reer ef bmete | | TTT | | py eee 2p asc Po 2: PPS oN) so? PE ON) CEST AND £ 100 £ 100
3 ALN Be
TS 9 273 5 4m 23 5 4 23 5 TS 3 23 5 ww 22 5 «Oo 5 Collector Current,lg — mA Collector Current,Ig — mA No.4661-2/4
: 2SA1881/2SC4983 OO Vee(saty -_ Ic Vee(sat) ~ Ic “ ee eee ee ee ee = tt HH [| Tlo/p=20 = [_[]ic/lp=20 * Jie 1 foi | pha
3 Tot | i oa Pity t Tt
Sel i) | VA wy, | sseetaias) Aor] Wocrmcece® 2 2s FHA Ak gs CLO Ao ss Lt JA Pitty | ge sy” [i] hoe Jt 23 Le im 8a A Sh Or Coo rrr A [TT yy yy | (| aa 7 5% 29 5 Ly 2 > 5 Lig 3. 574 2 3 5 ?4q 2 3 5 Tio 2 Collector Current, — mA Collector Currentylg — mA 40 aan 40 nan ey Ie
1 Io/Ig=20| 1 Io/lp=20
J TTT nan > yt utr aq) UP iti try oad anlin a a 2 11 an cal PJ) eit Pitt te i 7 | | mul ee LT 2> Ta=— 25°C. 25°C Sis 2° [Tas IC py 28°C he 2c SS Ee || aioe sf 414 f LJ 33 et i Pit HL LH fa, fo an 3 3 ti it TP Aman iit yy ty S 5149 239 8 %ay 2 3 5 Magy 2 3S Ty 23 574 2 3 5 Taq 2 Collector Currentlg — mA Collector Current,lg — mA
100 Cob - Vee 4000 f= Ie
& | eg TTT PP ae gS Pt gt ee NT ar aa Lee — 33 oe = g {ga3 oe See ee ~ Ey ian Bout <I 3 q Pe aaaill 3 aes i z 10 = é 100 eg, i) Te yP | ey yr 7 7 5 7 [LT ror Pap, minassignis omiten Am ST 40 2 03 5 7 49 2 T 9 2°03 57m 2 3 5 Tap Collector-to-Base Voltage,Vcx — V Collector Currentjlg — mA AsO ASO icel TT TT TTT fice] TT TT TT sede ttt Re PSN] s CTT ADS eee a a | 1 TS NST 2 9 a A 2 OPS SSH -7y7tNI aN 7,1 NI | | APY 5 pt R8eot Ee ae ee i Be oO sof | itt See DOIN ¢,.P PS TTS] 3 pe PP er Fee a < = gesaiean [PN 2 escass S fericnsee +t I) S fies CP NET Mounted on glass epoxy board —-—t- PJ] 4 Mounted on glass epoxy board —-——P~}-| oor} 20X20%1.8nim - | | o.or}(20X30X 1.6mm) | Sk J 10 b) Collector-to-Emitter Voltage,Vcg — V Collector-to-Emitter Voltage, Vcg — V — SO ee «oto to Emitter Voltage = V No.4661-3/4
Po - Ta . 0.28 ¥-) 28, A oP 0.20) IS eo, fad | | Rel TT 3 016 aN %o, & by, Fj oy Zong os
5 So,
B 0.08 IN ue Sea | it Ss Som INS, EERE. 0 IN 0 2 © 60 6 10 120 %0 160 Ambient Temperature,Ta — °C MENo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. W Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affilates, subsidiaries and distributors or any of their officers and employees jointly or severally. WW Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.4661-4/4