2SC4976_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors NPN Transistors 2SC4976 ■ Features
- High fT : fT=400MHz(typ).
- High breakdown voltage
- Large current capacitance.
- Complementary to 2SA1875 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 200 Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 300 Collector Current - Pulse ICP 600 Base Current IB 30 Collector Power Dissipation 0.8 Tc = 25℃ 12 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V mA PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 200 Collector- emitter breakdown voltage VCEO Ic= 1 mA， RBE= ∞ 200 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 3 Collector-base cut-off current ICBO VCB= 150V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 2V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 1 Base - emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 1 VCE= 10V, IC= 50mA 60 320 VCE= 10V, IC= 250mA 20 Reverse Transfer Capacitance Cre VCB= 30V,f=1MHz 3.4 Collector output capacitance Cob VCB= 30V,f=1MHz 4.2 Transition frequency fT VCE= 10V, IC= 100mA 400 MHz DC current gain hFE pF V uA V ■ Classification of hfe(1) Type 2SC4976-D 2SC4976-E 2SC4976-F Range 60-120 100-200 160-320
www.kexin.com.cn2 Transistors NPN Transistors 2SC4976 ■ Typical Characterisitics IC -- VBE Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- mA 100 350 150 200 250 300 2SC4976 VCE=10V Ta=75 bC C --25 C hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE 3 5 7 00101 32 57532 100 2SC4976 VCE=10V Ta=75 C 25 C --25 C VCE(sat) -- IC Collector Current, IC -- mA Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 0.1 1.0 3 5 7 00101 32 57532 2SC4976 IC / IB=10 Ta=75 C --25 C 25 C VBE(sat) -- IC Collector Current, IC -- mA Base-to-Emitter Saturation Voltage, VBE(sat) -- V 1.0 0.1 00101 23 7 55 73 5 2 3 2SC4976 IC / IB=10 75 C Ta= --25 C 25 C Output Capacitance, Cob -- pF Cob -- VCB Collector-to-Base Voltage, VCB -- V 1.0 27 3 5 3 727 001010.1 25 2SC4976 f=1MHz 1.0 27 3 5 3 727 001010.1 25 Reverse Transfer Capacitance, Cre -- pF Cre -- VCB Collector-to-Base Voltage, VCB -- V 2SC4976 f=1MHz b b b b b b b b b b b
www.kexin.com.cn 3 Transistors NPN Transistors 2SC4976 ■ Typical Characterisitics Gain-Brandwidth Product, fT -- MHz 322 3 7 3255 71.0 10 100 57 fT -- IC Collector Current, IC -- mA 2SC4976 VCE=10V 100 1000 No heat sink Collector Dissipation, PC -- W Ambient Temperature, Ta -- bC 1.0 0.8 0.6 0.4 0.2 20 060 40 80 100 140120 160 PC -- Ta A S O Collector Current, IC -- mA Collector-to-Emitter Voltage, VCE -- V 100 1000 10 25 573 3 7 100 2 3 ICP=600mA 10ms DC operationDC operation Ta=25 C P C=0.8W 1ms IC=300mA Tc=25bC Single pulse For PNP, minus sign is omitted Collector Dissipation, PC -- W Case Temperature, Tc -- bC 20 060 40 80 100 140120 160 PC -- Tc b