2SA1875 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

Features

  • High fT : fT=400MHz(typ).
  • High breakdown voltage : VCEO ≥200V(min).
  • Large current capacitance.
  • Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=3.4pF(NPN), 4.2pF(PNP).
  • Adoption of FBET process. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SA1875 / 2SC4976 High-Definition CRT Display Video Output Applications

52101 TS IM TA-9766

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. PNP / NPN Epitaxial Planar Silicon Transistors Package Dimensions unit : mm 2045B unit : mm 2044B [2SA1875 / 2SC4976] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 5.0 6.5 0.85 0.7 0.6 1.55.5 7.0 0.8 1.6 7.5 0.5 1.2 2.3 0.5 1 23 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 6.5 2.3 0.5 1.55.5 0.8 7.0 1.2 2.5 5.0 0.85 0.5 1.2 0 to 0.2 2.3 2.3 0.6 [2SA1875 / 2SC4976]

No.5507-2/5 Specifications ( ) : 2SA1875 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -)200 V Collector-to-Emitter Voltage V CEO (- -)200 V Emitter-to-Base Voltage V EBO (- -)3 V Collector Current I C (- -)300 mA Collector Current (Pulse) I CP (- -)600 mA Base Current I B (- -)30 mA Collector Dissipation P C 0.8 W Tc=25°C1 2 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =(- -)150V, IE=0 (- -)0.1 µA Emitter Cutoff Current I EBO VEB =(- -)2V, IC =0 (- -)1.0 µA DC Current Gain hFE 1V CE =(- -)10V, IC =(- -)50mA 60* 320* hFE 2V CE =(- -)10V, IC =(- -)250mA 20 Gain-Bandwidth Product f T VCE =(- -)10V, IC =(- -)100mA 400 MHz Output Capacitance Cob V CB =(- -)30V, f=1MHz (5.0)4.2 pF Reverse Transfer Capacitance Cre V CB =(- -)30V, f=1MHz (4.2)3.4 pF Collector-to-Emitter Saturation Voltage VCE (sat) I C =(- -)50mA, IB=(- -)5mA (--)1.0 V Base-to-Emitter Saturation Voltage V BE (sat) I C =(- -)50mA, IB=(- -)5mA (--)1.0 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =(- -)10µA, IE=0 (- -)200 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =(- -)1mA, RBE =∞ (- -)200 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)100µA, IC =0 (- -)3 V * : The 2SA1875 / 2SC4976 are classified by 50mA hFE as follows Rank D E F hFE 60 to 120 100 to 200 160 to 320 IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA IT03431 --100 --50 --350 --150 --200 --250 --300 2SA1875 V CE = --10V IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA IT03432 100 350 150 200 250 300 2SC4976 V CE =10V Ta=75 --25 Ta=75 --25

No.5507-3/5 ITR04480 Output Capacitance, Cob -- pF Cob -- VCB Collector-to-Base V oltage, VCB -- V 1.0 273 5 3 7 27--1.0 --10 --100 25 2SA1875 f=1MHz ITR04481 Output Capacitance, Cob -- pF Cob -- VCB Collector-to-Base V oltage, VCB -- V 1.0 273 5 3 7 271.0 10 100 25 2SC4976 f=1MHz hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE IT03433 hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE IT03434 IT03437 IT03438 VCE (sat) -- IC Collector Current, IC -- mA VBE (sat) -- IC Collector Current, IC -- mA VBE (sat) -- IC Collector Current, IC -- mA IT03435 VCE (sat) -- IC Collector Current, IC -- mA IT03436 Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Base-to-Emitter Saturation V oltage, VBE (sat) -- V Base-to-Emitter Saturation V oltage, VBE (sat) -- V Collector-to-Emitter Saturation V oltage, VCE (sat) -- V 35 7 --10 --100 3223 5 7 5 100 2SA1875 V CE = --10V Ta=75°C 25°C --25°C 35 7 10 100 3223 5 7 5 100 2SC4976 V CE =10V Ta=75°C 25°C --25°C 1.0 0.1 --1.0 --0.1 237 55 735 2 3--10 --100 2SA1875 IC / IB =10 75°C Ta= --25°C 10 100 237 55 735 2 3 2SC4976 IC / IB =10 35 7 --10 --100 3223 5 7 --0.1 --1.0 0.1 1.0 2SA1875 IC / IB =10 Ta=75°C --25°C 35 7 10 100 3223 5 7 5 2SC4976 IC / IB =10 25°C Ta=75 --25°C 25°C 25°C 75°C Ta= --25°C 25°C Ta= --25 °C 25

No.5507-4/5 Collector Dissipation, PC -- W Case Temperature, Tc -- °C 2006 0 40 80 100 140 120 160 PC -- Tc ITR08233 Reverse Transfer Capacitance, Cre -- pF Cre -- VCB ITR04482Collector-to-Base V oltage, VCB -- V 1.0 273 5 3 7 27--1.0 --10 --100 25 2SA1875 f=1MHz 1.0 273 5 3 7 271.0 10 100 25 Reverse Transfer Capacitance, Cre -- pF Cre -- VCB Collector-to-Base V oltage, VCB -- V ITR04483 2SC4976 f=1MHz No heat sink Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C 1.0 0.8 0.6 0.4 0.2 2006 0 40 80 100 140 120 160 PC -- Ta ITR08232 A S O Collector Current, IC -- mA Collector-to-Emitter V oltage, VCE -- V 100 1000 10 2537 5 37 100 23 ICP =600mA 10ms DC operationDC operation Ta=25 °C P C =0.8W 1ms IC =300mA ITR08231 Tc=25°C Single pulse For PNP, minus sign is omitted Gain-Brandwidth Product, fT -- MHz 22 337 55 2 3 7--1.0 --10 --100 57 fT -- IC Collector Current, IC -- mA ITR04484 2SA1875 V CE = --10V 100 1000 Gain-Brandwidth Product, fT -- MHz 22 337 55 2 3 71.0 10 100 57 fT -- IC Collector Current, IC -- mA ITR04485 2SC4976 V CE =10V 100 1000

No.5507-5/5 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2001. Specifications and information herein are subject to change without notice. PS