2SC4960 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching n Features l High-speed switching l High collector to base voltage VCBO l Satisfactory linearity of foward current transfer ratio hFE l Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CES V CEO V EBO ICP IC IB PC Tj Tstg Ratings 900 900 900 800 900 0.3 150 –55 to +150 Unit V V V V A A A W 2SC4960 2SC4960A 2SC4960 2SC4960A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 hFE2 V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = 900V, IE = 0 V EB = 7V , IC = 0 IC = 1mA, IB = 0 IC = 1mA, IB = 0 V CE = 5V , IC = 0.05A V CE = 5V , IC = 0.5A IC = 0.2A, IB = 0.04A IC = 0.2A, IB = 0.04A V CE = 10V , IC = 0.05A, f = 1MHz V CC = 250V min 800 900 typ max 1.5 Unit mA mA V V V MHz ms ms ms 2SC4960 2SC4960A Unit: mm 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) 15.0–0.3 21.0–0.516.2–0.5 12.5 Solder Dip 3.5 0.715.0–0.2 5.0–0.2 11.0–0.2 10.9–0.5 5.45–0.3 321 1.1–0.1 2.0–0.2 0.6–0.2 2.0–0.1 f3.2–0.1 3.2

Power Transistors 2SC4960, 2SC4960A PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) Without heat sink (PC =3.0W) (1) (3) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 1.2 1.0 0.8 0.6 0.4 0.2 TC =25˚C 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 10mA 100mA IB=200mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.03 0.1 0.3 1 0.01 0.3 0.1 0.03 IC /IB=5 –25˚C 25˚C TC =100˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.03 0.1 0.3 1 0.01 0.3 0.1 0.03 IC /IB=5 TC =–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 3 10.10.03 0.3 0.1 0.3 100 VCE =5V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.1 0.3 100 300 1000 VCE =10V f=1MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 0.01 0.03 0.1 0.3 100 tstg tf ton Pulsed tw =1ms Duty cycle=1% I C /IB=5 (2IB1=–IB2) VCC =250V TC =25˚C Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.01 0.1 0.03 0.3

3 ICP

TC =25˚C 2SC4960 2SC4960A DC 10ms t=1ms Collector to emitter voltage VCE (V) Collector current IC (A)

Power Transistors 2SC4960, 2SC4960A Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 0.1 100 10000 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V · 0.3A (3W) and without heat sink (2) PT=10V · 1.0A (10W) and with a 100 · 100 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W) 0 1600400 1200800 1400200 1000600 4.0 3.0 1.0 2.5 3.5 2.0 0.5 1.5 ICP Lcoil=100µH IC /IB=5 (IB1=–IB2) TC =25˚C Collector to emitter voltage VCE (V) Collector current IC (A) L coil ICIB1 Vin tW –IB2 Vclamp VCC T.U.T