2SC4953 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

iscWebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC4953

DESCRIPTION

  • SiliconNPNtriple diffusionplanartype
  • High SpeedSwitching
  • 100% avalanche tested
  • Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation

APPLICATIONS

  • Designedforhigh breakdown voltagehigh speedswitching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 500 V VCEO Collector-EmitterVoltage 400 V VEBO Emitter-BaseVoltage 7 V IC CollectorCurrent-Continuous 3 A ICM CollectorCurrent-peak 6 A IB BaseCurrent 1.2 A PC CollectorPowerDissipation TC=25℃ 30 W Ti JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃

iscWebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC4953 ELECTRICALCHARACTERISTICS TC =25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=10mA;IB=0 400 V VCE(sat) Collector-EmitterSaturationVoltage IC=1.5A;IB=0.3A 1.0 V VBE(sat) Base-EmitterSaturationVoltage IC=1.5A;IB=0.3A 1.5 V ICBO CollectorCutoffCurrent VCB=500V; IE=0 0.1 mA IEBO EmitterCutoffCurrent VEB=5V;IC=0 0.1 mA hFE-1 DCCurrentGain IC=0.1A;VCE=5V 10 hFE-2 DCCurrentGain IC=1.2A;VCE=2V 8 40 fT Current-Gain—BandwidthProduct IE=-0.2A;VCE=10V 10 MHz SwitchingTimes ton Turn-OnTime IC=1.5A;VCC=200V; IB1=0.15A;IB2=-0.3A; 1 μs ts StorageTime 3 μs tf FallTime 0.3 μs