2SC4953 PANASONIC

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Technical content

Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching n Features l High-speed switching l High collector to base voltage VCBO l Wide area of safe operation (ASO) l Satisfactory linearity of foward current transfer ratio hFE l Dielectric breakdown voltage of the package: > 5kV n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CES V CEO V EBO ICP IC IB PC Tj Tstg Ratings 500 500 400 1.2 2.0 150 –55 to +150 Unit V V V V A A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 hFE2 V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = 500V, IE = 0 V EB = 5V , IC = 0 IC = 10mA, IB = 0 V CE = 5V , IC = 0.1A V CE = 2V , IC = 1.2A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A V CE = 10V , IC = 0.2A, f = 1MHz V CC = 200V min 400 typ max 100 100 1.0 1.5 1.0 3.0 0.3 Unit mA mA V V V MHz ms ms ms TC =25°C Ta=25°C Unit: mm 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package 9.9–0.3 15.0–0.513.7–0.2 4.2–0.2 4.6–0.2 2.9–0.2 0.8–0.1 1.4–0.2 f3.2–0.1 2.6–0.1 0.55–0.15 2.54–0.3 5.08–0.5 3.0–0.5 1.6–0.2

IC —V CE IC —V CE(sat) hFE —I C fT —I C ton, tstg, tf — IC Area of safe operation (ASO) Area of safe operation, reverse bias ASO 01 2 10826 4 5.0 4.0 3.0 2.0 1.0 4.5 3.5 2.5 1.5 0.5 TC =25˚C 450mA 400mA 350mA 300mA 250mA 200mA 150mA 100mA 50mA IB=500mA Collector to emitter voltage VCE (V) Collector current IC (A) TC =–25˚C 25˚C 125˚C IC /IB=5 Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (A) 300 100 VCE =5V TC =125˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.03 0.1 0.3 1 0.1 100 0.3 VCE =10V f=1MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 0.01 0.03 0.1 0.3 100 Pulsed tw =1ms Duty cycle=1% I C /IB=10(2IB1=–IB2) VCC =200V TC =25˚C tstg tf ton Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 t=1ms 10ms ICP IC Non repetitive pulse Ta=25˚C Ta=85˚C Collector to emitter voltage VCE (V) Collector current IC (A) 0 800 200 600 400 700100 500 300 4.0 3.0 1.0 2.5 3.5 2.0 0.5 1.5 IC /IB=5 Lcoil=100µH TC =25˚C Collector to emitter voltage VCE (V) Collector current IC (A)