2SC4923 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4923
DESCRIPTION
- With TO-3PML package
- High speed
- High reliability
- High breakdown voltage
APPLICATIONS
- High-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION
1 Base
2 C o l l e c t o r
3 Emitter
Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A ICP Collector current-peak 25 A PC Collector power dissipation TC=25℃ 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3PML) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4923 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=100mA ;IB=0 800 V ICBO Collector cut-off current V CE=800V; IE=0 10 μA ICES Collector cut-off current V EB=1500V; RBE=0 1.0 mA IEBO Emitter cut-off current V CE=4V; IC=0 1.0 mA hFE-1 DC current gain I C=1A ; VCE=5V 8 hFE-2 DC current gain I C=6A ; VCE=5V 4 8 VCE(sat) Collector-emitter saturation voltage I C=6A ; IB=1.5A 5 V VBE(sat) Base-emitter saturation voltage I C=6A ; IB=1.5A 1.5 V tstg Storage time I C=6A; IB1=1.2A;IB2=-2.4A 3 μs tf Fall time I C=6A; IB1=1.2A;IB2=-2.4A 0.1 0.2 μs
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4923 PACKAGE OUTLINE Fig.2 outline dimensions
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4923