2SC4922 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
- High DC current gain. - On-chip bias resistance (R1 = 47k0,R2= 47k) - Very small-sized package permitting 25C4922-applied sets to be made smaller and slimmer. + Small ON resistance. Absolute Maximum Ratings at Ta=25°C unit Collector-to-Base Voltage Vogo 25 Vv Collector-to-Emitter Voltage VocEo 20 OV Emitter-to-Base Voltage VeBo 10 Vv Input Voltage Vin 18 Vv Collector Current Ig 100 mA Collector Current (Pulse) lop 200 mA Base Current Ip 20 mA Collector Dissipation Po 150 mW Junction Temperature Tj 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current IcBo Vop=20V, Ip =0 01 pA Collector Cutoff Current Icko Vog=15V,Ig=0 0.5 pA Emitter Cutoff Current IEBo Vep=5V,Ic=0 30 53 80 vA DC Current Gain bre Vog=2V,Ic=5mA 200 Gain-Bandwidth Product fy* Voe=5V,Ic=10mA 240 MHz Output Capacitance Cob* Vop=10V,f=1MHz 1.4 pF C-E Saturation Voltage Versa) Ic=2mA,Ip=0.2mA 10 30 mV C-B Breakdown Voltage VosrcBo I¢=10zA,1g=0 25 Vv C-E Breakdown Voltage Veerceo Ic¢=1mA,Rgg= 2 20 Vv Input OFF-State Voltage Vico Vog=2V,Ic=100zA 07°10 14 V Input ON-State Voltage Vivon) Vog=0.3V,Ic=5mA 10 15 30 V Input Resistance RI 32 47 62 kQ Resistance Ratio RUR2 09 1.0 1.1 ON Resistance Ron Vin =10V,f=1MHz 4.0 a * Characteristic of the constituent transistor. Marking: GA Package Dimensions 2106A Electrical Connection (unit : mm) 0 tt c (our) 3 ia (INPUT) ¢ i i} =O Goss) Remit 2: Emitter CCollector 3: Collector e SiSeee Hee) (ONO) ExEmitter — SANYO : SMCP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 53094TH (KOTO) AX-8876 No.4768-1/2
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