2SC4921 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

Features

  • High DC current gain. + On-chip bias resistance (R1=10k0,R2= 10k) + Very small-sized package permitting 25C4921-applied sets to be made smaller and slimmer. - Small ON resistance. Absolute Maximum Ratings at Ta=25°C unit Collector-to-Base Voltage Voso 25 v Collector-to-Emitter Voltage Voro 20 =#OV Emitter-to-Base Voltage VEBO 10 Vv Input Voltage Vin 18 v Collector Current Ig 100 mA Collector Current (Pulse) Iop 200 mA Base Current Ip 20 mA Collector Dissipation Po 150 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current IcBo Vop=20V,Ip=0 0.1 pA Collector Cutoff Current Icro Vog=15V,Ip=0 0.5 yA Emitter Cutoff Current TzBo Vep=5V,Ic=0 195 250 360 yA DC Current Gain hee Vop=2V,Io=10mA 100 Gain-Bandwidth Product fz* Vor=5V,Ic=10mA 240 MHz Output Capacitance Cob* Vop=10V, f=1MHz 14 pF C-E Saturation Voltage Verwat) Ic=2.5mA,I[p=0.25mA 10 30 mV C-B Breakdown Voltage Viprycpo Ic=10uA,[p=0 25 Vv C-E Breakdown Voltage Vearmceo Ic=1mA,Rgp=° 20 v Input OFF-State Voltage Viworn) Vop=2V,I¢=100pA 07 11°14 ~+9 Input ON-State Voltage Vivon) Vor=0.3V, Io¢=10mA 10 #15 #30 V Input Resistance R1 70 10 13 ka Resistance Ratio RIU/R2 09 10 11 ON Resistance Ron Vin=5V,f=1MHz 2.8 a * Characteristic of the constituent transistor. Marking : FA Package Dimensions 2106A Electrical Connection (unit : mm) 9 3 ian i cout J 34 7 al | Ss rex | os| 634 —T 1:Base 4 crcoliect Tey 2: Emitter 1Collector 3: Collector E @:Base Ha (GND) E:emitter th it Hy SANYO:SMCP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 53094TH (KOTO) AX-9002 No.4767-1/2

hee - Ic Ic_= Vi(offy ett tee re 1:10) Joe : rio ||| | ees | 1000) > Loue ee a] man 4 eee ee ae | — < Xi 2 3 100) y zs ced io 3 : ft | c= 2S =e ae ao y S 10 pe A ee PPP g {WMT Tiy Ty Try | g s—_| a SLT) s pF E+} 10 of i Aa gt [| [PTT Ty Try | 10) 1.0 3 7 2 9 S710 2 ) Cry 08 12 16 2.0 Collector Current,lg — mA Input OFF-State Voltage, Vim — V Vi(on) - Ic Ron - Vin Woe=0.3V f=1MHz > RL: 10kQ R1:10kQ Rulka 1 yo /R2:10k0 R2:10kQ [| IN OUT Et ITT TTT ¢. KS edt (TUT Titi A wit ba Fy ns) : PEEL poe Y g j Ht oA | Fp a

4 ZB re Nee

al ===-- 000i N —— Zz He oe 6] J] NP PET Try Tr a pp |

1.0 TO oS 71m 2 10 10 73

Collector Current,Jg — mA Input Voltage, Vin — V

160 Pc - Ta

Sq | (KT TTT go, 1 1 IN TT E% r a4 | | | IN TT A 60 ea | | TT NTT sat | | TTN 3 Ne LET IN Oo 90 8800 a T60 Ambient Temperature,Ta — °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. HM Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Aoccept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTO, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ee No.4767-2/2