2SC4855 SANYO

Document overview

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Technical content

Features

+ Low-voltage, low-current operation : fp=5GHz typ. (Vog=1V, Ic¢=1mA) : | S2le | ?=7.5dB typ (f= 1GHz). : NF=2.6dB typ (f= 1GHz). Absolute Maximum Ratings at Ta= 25°C unit Collector-to-Base Voltage Voso 12 v Collector-to-Emitter Voltage Voro 6 Vv Emitter-to-Base Voltage VEBO 15 Vv Collector Current Ig 15 mA Collector Dissipation Po 80 mW Junction Temperature Tj 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector CutoffCurrent —Icgo Vop=5V,Ig=0 1.0 pA Emitter Cutoff Current IgBo Vep=1V,Ic=0 10 pA DC Current Gain bre Vogr=1V,Ic=1mA 60 270K Gain-Bandwidth Product fp Vor=1V,Ig=1mA 5 GHz Output Capacitance Cob Vop=1V, f=1MHz 06 41.0 pF Forward Transfer Gain | S21e | 21) Vog=1V,Ic=1mA, f=1GHz 5 75 dB | S21e | (2) Voz=2V,Ic=3mA, f=1GHz 11.5 dB Noise Figure NF(1) Vog=1V,Ic¢=1mA, f=1GHz 26 45 dB NF(2) Voe=2V,I¢=3mA, f=1GHz 19 dB 2% : The 2SC4855 are classified by 1mA hpg as follows: [60 3 120 | 90 4 180 | 135 5 270 Marking : CN hpg rank : 3,4,5 Package Dimensions 2110A (unit:mm) 45, o 046 095.095, 3 apo Ptah | | “ + 23 SESS 0.95 085 3 7 29 1: Emitter 2: Collector T «3: Emitter bene 4: Base SANYO: CP4 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 10 JAPAN 90794MT (KOTO) BX-0759 No.4759-1/4

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100 Po - Ta

2 40! S I LEN a, AN eT LET ET NG ° N ° 2 «a 60 8 cree} 120 1%0 160 Ambient Temperature, Ta — °C tamer tampmemce E No.4759-2/4

£=200~2000MHz (200MHz step ) f= 200~2000MHz (200MHz step) Js0 irs | jo wo fo" P< Be SRG ERS j200 Cn; 19 {KE 34 o = ASSN I TORS EER eo HTS | 2008) 1K end LL Phage See TET hl I, NG ane LOLS SEEEL +10 COMES USAR TT NSE iw OSORNO O50 OSX RATES Ls Steg LZ AK QAR Lj jes" 4100 STEERS ab CEES ~126 Corr “60 a y00~2000MFz (200MHz step ) Fo dh0~2000Mite (200MHz step) ste a PH ee | PORN mUCELEECE RSE Mr «| | xf af ass) POR, a SC eilen SSH ES ER QCSEEER OY wee > REF ESS A 8 co 270" =750 No.4759-3/4

S Parameters (Common emitter) a ee Vcg=1V, Ic=1mA, 29=502 Frama | isui [28a Tisai [ 2on [8a | 28u | iSa' | 280 | a |__s400 | oars | 1001 | 20x | ess | ors [oa | ors 1600 =uit | asd [ra [oases [7 289 | oes [604 | 1800 os | -1252 | izas | x9 | oan | aca | osu [200 | “ass [1509 [ass [oz | eam | 262 | oss | ore Vog=2V, Ic=3mA, Zo=502 Frama | isnt | 2s [isnt [ cen [isa | 282 | ism1 | 28a | woo | os0e | -1154 | 3225 | ons [ose [459 | osee | — a0 | woo | 0.260 | -1306 | aes |" a5 | oasr [450 | os | ssa | |__1600 | o2s0 | -1452 [21s [ene [ons | as | oes | —sos | 1800 ozis_| 1605 | azse | x0 | orss [2 [oso | -603 | IB No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-pravention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. eee No.4759-4/4