2SC4853A SANYO

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  • Low-voltage, low-current operation : fT=5GHz typ. (VCE=1V , IC=1mA) : ⏐S21e⏐2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 12 V Collector-to-Emitter Voltage V CEO 6V Emitter-to-Base Voltage V EBO 1.5 V Collector Current I C 15 mA Collector Dissipation P C 90 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB=5V, IE=0A 1.0 μA Emitter Cutoff Current I EBO VEB=1V, IC=0A 10 μA DC Current Gain h FE VCE=1V, IC=1mA 60* 270* * : The 2SC4853A is classified by 1mA hFE as follows : Marking CN3 CN4 CN5 Rank 3 4 5 hFE 60 to 120 90 to 180 135 to 270 SANYO Semiconductors DATA SHEET www.semiconductor-sanyo.com/network D2408AB MS IM TC-00001797 Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 2SC4853A NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current High-Frequency Amplifier Applications

No. A1076-2/5 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Gain-Bandwidth Product f T VCE=1V, IC=1mA 5 GHz Output Capacitance Cob V CB=1V, f=1MHz 0.6 1.0 pF Forward Transfer Gain ⏐S21e⏐ 21V CE=1V, IC=1mA, f=1GHz 4.5 7 dB ⏐S21e⏐ 22V CE=2V, IC=3mA, f=1GHz 10.5 dB Noise Figure NF1 V CE=1V, IC=1mA, f=1GHz 2.6 4.5 dB NF2 V CE=2V, IC=3mA, f=1GHz 1.9 dB Package Dimensions unit : mm (typ) 7023-009 0.65 0.65 2.0 0.9 0.60.3 2.1 1.25 0.4250.425 0.20.3 0.15 0 to 0.1 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Collector Current, IC -- mA Gain-Bandwidth Product, fT -- GHz fT -- IC Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF ITR07583 f=1MHz 3521.0 7355 20.1 772 10 1.0 0.1 ITR07582 2323 5 57 7 101.0 2 1.0 VCE =2V hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE Collector-to-Emitter V oltage, VCE -- V IC -- VCE Collector Current, IC -- mA 1000 100 IT14233 VCE=2V 1.0325 70.1 325 2 3 7 10 IT14232 12 4 35 6 IB=0μA 15μA 30μA 60μA 45μA 75μA 90μA 105μA 135μA150μA 120μA

No. A1076-3/5 ⏐S21e⏐2, NF -- dB ⏐S21e⏐2, NF -- VCE Collector-to-Emitter V oltage, VCE -- V 652 410 73 f=1GHz ITR07586 IC=3mA 1mA IC=1mA 3mA NF ⏐S21e⏐ ⏐S21e⏐2 -- IC Collector Current, IC -- mA Forward Transfer Gain,⏐S21e⏐2 -- dB ITR07584 7 1.0 2323 5 57 f=1GHz VCE =2V Collector Current, IC -- mA Noise Figure, NF -- dB NF -- IC 355 232 1.0 772 10 f=1GHz ITR07585 VCE =1V Collector Dissipation, PC -- mW PC -- Ta Ambient Temperature, Ta -- °C 100 2006 0 40 80 100 140 120 160 IT14234

No. A1076-4/5 S Parameters S11e f=200MHz to 2000MHz(200MHz Step) S21e f=200MHz to 2000MHz(200MHz Step) S12e f=200MHz to 2000MHz(200MHz Step) S22e f=200MHz to 2000MHz(200MHz Step) j50 j25 j10 0 10 --j10 --j25 --j50 --j100 --j150 --j200 --j250 j100 j150 j200 j250 100 150 250 90° 120° 150° ±180° --150° --120° --90° --30° --60° 60° 30° 6 842 0.2GHz 0.2GHz 2.0GHz 90° 120° 150° ±180° --150° --120° --90° --30° --60° 60° 30° 0.05 0.15 0.200.10 j50 j25 j10 0 0.2 0.5 --j10 --j25 --j50 --j100 --j150 --j200 --j250 j100 j150 j200 j250 20 100 2.0GHz ITR07588 ITR07589 ITR07590 ITR07591 0.2GHz2.0GHz 2.0GHz 0.2GHz 0.2GHz VCE=1VIC=1mA VCE=2V IC=3mA VCE =1V IC=1mA VCE=2V IC=3mA VCE =1V IC=1mA VCE =2V IC=3mA VCE=1V IC=1mA VCE=2V IC=3mA

No. A1076-5/5 S Parameters (Common emitter) VCE=1V , IC=1mA, ZO=50Ω VCE=2V , IC=3mA, ZO=50Ω SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. This catalog provides information as of December, 2008. Specifications and information herein are subject to change without notice. PS