2SC4852 KEXIN
Document overview
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Technical content
Features
Small output capacitance. Low collector-to-emitter saturation voltage. Small ON resistance. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 25 V Collector-emitter voltage V CEO 15 V Emitter-base voltage V EBO 5V Collector current I C 100 mA Collector current (pulse) I CP 200 mA Base current I B 20 mA Collector dissipation P C 250 mW Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB =1 5 V ,IE=0 0.1 ìA Emitter cutoff current I EBO VEB =4 V ,IC=0 0.1 ìA DC current gain h FE VCE =2 V,I C =5 m A 8 0 0 3 2 0 0 Gain bandwidth product f T VCE =5 V,I C =1 0 m A 2 4 0 M H z Output capacitance C ob VCB = 10V , f = 1.0MHz 1.4 pF Collector-emitter saturation voltage V CE(sat) IC =1 0 m A,IB = 1mA 14 30 mV Base-emitter saturation voltage V BE(sat) IC =1 0 m V,IB = 1mA 0.74 1.1 V Collector-base breakdown voltage V (BR)CBO IC =1 0 ì A,IE =0 2 5 V Collector-emitter breakdown voltage V (BR)CEO IC =1 m A,RBE = 15 V Emitter-base breakdown voltage V (BR)EBO IE =1 0 ì A,IC =0 5 V On resistance R on IB = 3mA, f = 1.0MHz 0.9 Ù Marking Marking YT NPN Epitaxial Planar Silicon Transistor 2SC4852