2SC4787 PANASONIC

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Technical content

Silicon NPN epitaxial planer type For intermediate frequency amplification n Features l High transition frequency fT. l Satisfactory linearity of forward current transfer ratio hFE . l Allowing supply with the radial taping. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base MT1 Type Package 6.9–0.1 1.05 –0.05 2.5–0.1 3.5–0.114.5–0.5 (1.45) 0.80.7 4.0 0.15 0.85 0.8 1.0 0.65 max. 0.45 +0.1 –0.05 0.45 +0.1 –0.05 2.5–0.5 2.5–0.5 2.5–0.1 123 Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings 600 150 –55 ~ +150 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Common emitter reverse transfer capacitance Power gain Transition frequency Symbol ICBO V CBO V CEO V EBO hFE V CE(sat) C re PG f T Conditions V CB = 20V , IE = 0 IC = 100mA, IE = 0 IC = 1mA, IB = 0 IE = 100mA, IC = 0 V CE = 10V , IC = 10mA IC = 20mA, IB = 2mA V CB = 10V , IE = –1mA, f = 10.7MHz V CB = 10V , IE = –10mA, f = 58MHz V CB = 10V , IE = –10mA, f = 100MHz min 300 typ 500 max 0.1 100 0.5 1.5 Unit mA V V V V pF dB MHz 1.2–0.1 0.65max. 0.45 0.1 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type)

PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB C re — V CE PG — IE 0 160 40 120 80 14020 100 60 800 600 200 500 700 400 100 300 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 0 826 4 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA Collector to emitter voltage VCE (V) Collector current IC (mA ) VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 120 100 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 600 500 400 300 200 100 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 3.0 2.5 2.0 1.5 1.0 0.5 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 1 3 10 30 100 2.4 2.0 1.6 1.2 0.8 0.4 IC =1mA f=10.7MHz Ta=25˚C Collector to emitter voltage VCE (V) Common emitter reverse transfer capacitance Cre (pF) VCB =10V f=58MHz Ta=25˚C Emitter current IE (mA ) Power gain PG (dB)