2SC4782 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
Silicon NPN epitaxial planer type For high speed switching n Features l High-speed switching. l Low collector to emitter saturation voltage VCE(sat). l Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.950.95 1.9–0.2 0.4 +0.1 –0.05 1.1 +0.2 –0.10.8 0.4–0.2 0 to 0.1 0.16 +0.1 –0.06 1.45 0.1 to 0.3 2.9 +0.2 –0.05 Symbol V CBO V CES V EBO ICP IC PC Tj Tstg Ratings 300 200 200 150 –55 ~ +150 Unit V V V mA mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time Symbol I CBO IEBO hFE * V CE(sat) V BE(sat) fT C ob ton toff tstg Conditions V CB = 10V , IE = 0 V EB = 4V , IC = 0 V CE = 1V , IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA V CB = 10V , IE = –10mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz Refer to the measurment circuit min 200 typ 0.17 0.76 500 max 0.1 0.1 200 0.25 1.0 Unit mA mA V V MHz pF ns ns ns Marking symbol :DV *hFE Rank classification Rank P Q R hFE 40 ~ 80 60 ~ 120 90 ~ 200 Marking Symbol DVP DVQ DVR
PC — Ta IC — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 120 100 Ta=25˚C 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA IB=3.0mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3
100 IC /IB=10
Ta=75˚C25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 Ta=–25˚C 25˚C 75˚C Collector current IC (mA ) Base to emitter saturation voltage VBE(sat) (V) 0.1 1 10 1000.3 3 30 240 200 160 120 VCE =1V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 1200 1000 800 600 400 200 VCB =10V Ta=25˚C f=200MHz Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) Switching time measurement circuit ton, toff Test Circuit t stg Test Circuit 220W 3.3kW 0.1mF 3.3kW 50W VCC =3V Vout 50W Vin=10V Vbb= –3V Vin Vin Vout ton toff Vout 10% 10% 90%90% 0.1mF 0.1mF A Vout Vin=10V Vbb=2V 90W VCC =10V 500W 50W 910W 500W 1kW Vin tstg Vout 10% 10% (Waveform at A)