2SC4710LS SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

  • High breakdown voltage(VCEO min=2100V).
  • Small Cob(typical Cob=1.3pF).
  • Wide ASO.
  • High reliability(Adoption of HVP process).
  • Full isolation package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 2100 V Collector-to-Emitter Voltage V CEO 2100 V Emitter-to-Base Voltage V EBO 5V Collector Current I C 10 mA Collector Current (Pulse) I CP 30 mA Collector Dissipation P C 2W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =2100V, IE=0 1 µA Emitter Cutoff Current I EBO VEB =4V, IC =0 1 µA DC Current Gain h FE VCE =5V, IC =500µA1 0 6 0 Gain-Bandwidth Product f T VCE =10V, IC =500µA 6 MHz Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SC4710LS 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Package Dimensions unit : mm 2079D [2SC4710LS]

11502 TS IM TA-3427 / 12099 HA (KT) / 73094 MT (KOTO) 8-7338

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Triple Diffused Planar Silicon Transistor 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS) 16.014.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.20.9 0.75 0.6 1.2 4.5 2.8 123 10.0 3.2

No.3688-2/3 ITR07477 ITR07478 IC -- VCE 1.0 0.1 100 5735 7 30.1 1.02 5732 10 2 73 101.00.15 732 5 7322 5 Ta= 120°C 25°C ITR07475 ITR07476 02468 1 0 hFE -- IC 06 8 421 0 400 600 1000 800 200 V CE =5V IB =0 5µA 10µA 20µA 15µA µA 25µA 30µA35µA IC -- VCE 40µA 45µA --40°C IB =0 50µA 100µA 400µA 200µA 600µA 800µA 1000µA1200µA 1400µA 1600µA 1800µA 2000 µA VCE (sat) -- IC IC / IB =5 Ta=120°C --40°C 25°C VBE (sat) -- IC ITR07479 1.00.157 57 232 35 7 23 10 1.0 IC / IB =5 Ta= --40°C 25°C 120°C ITR07480 IC -- VBE (ON) V CE =5V Ta=120 --40 Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- µA Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA Collector Current, IC -- mA DC Current Gain, hFE Base-to-Emitter ON V oltage, VBE (on) -- V Collector Current, IC -- mA Collector Current, IC -- mA Base-to-Emitter Saturation V oltage, VBE (sat) -- V Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation VoltageVCE (sat) I C =1mA, IB=200µA5 V Base-to-Emitter Saturation Voltage V BE (sat) I C =1mA, IB=200µA2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =10µA, IE=0 2100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =100µA, RBE =∞ 2100 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=10µA, IC =0 5 V Output Capacitance Cob V CB =100V, f=1MHz 1.3 pF

No.3688-3/3 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2002. Specifications and information herein are subject to change without notice. PS ITR07484 PC -- Ta 0 20 40 60 80 100 120 140 160 0.4 0.8 1.2 2.0 1.6 2.4 ITR07483 A S O 10ms 1ms 100 5 7 10005 7 23 523 0.1 1.0 ICP =30mA IC =10mA DC operation 100 µs Collector-to-Emitter V oltage, VCE -- V Ambient Temperature, Ta -- °C Tc=25°C Single pulse No heat sink Collector Current, IC -- mA Collector Dissipation, PC -- W PT≤50µs ITR07481 7 0.135 1.073522 1.0 fT -- IC V CE =10V ITR07482 Cob -- VCB 1.052 3 5 10 23 5 100 22 3 5 1000 1.0 f=1MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- mA