2SC4705 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

Features

High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage : VCE(sat) 0.5V max. High VEBO :V EBO 15V. Small size making it easy to provide high-density, hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 60 V Collector-emitter voltage V CEO 50 V Emitter-base voltage V EBO 15 V Collector current I C 200 mA Collector current (pulse) I CP 300 mA Base current I B 40 mA Collector dissipation,mounted on ceramic board(250mm2X0.8mm) PC 1.3 W Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0

www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB = 40V, IE=0 0.1 ìA Emitter cutoff current I EBO VEB = 10V, IC=0 0.1 ìA DC current gain h FE VCE =5 V,I C = 100mA 800 1500 3200 Gain bandwidth product f T VCE = 10V , IC = 10mA 250 MHz Output capacitance C ob VCB = 10V , f = 1.0MHz 4 pF Collector-emitter saturation voltage V CE(sat) IC = 100 mA , IB = 2 mA 0.12 0.5 V Base-emitter saturation voltage V BE(sat) IC = 100 mA , IB = 2 mA 0.85 1.2 V Collector-base breakdown voltage V (BR)CBO IC = 10ìA , IE =0 6 0 V Collector-emitter breakdown voltage V (BR)CEO IC =1 m A,RBE = 50 V Emitter-base breakdown voltage V (BR)EBO IE = 10ìA , IC =0 1 5 V 2SC4705 Marking Marking CP