2SC4695 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Adoption of FBET process. High DC current gain. High VEBO (VEBO 25V). High reverse hFE (150 typ). Small ON resistance [Ron=1W (IB=5mA)]. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 50 V Collector-emitter voltage V CEO 20 V Emitter-base voltage V EBO 25 V Collector current I C 500 mA Collector current (pulse) I CP 800 mA Base current I B 100 mA Collector dissipation P C 250 mW Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB =4 0 V ,IE=0 0.1 ìA Emitter cutoff current I EBO VEB =2 0 V ,IC=0 0.1 ìA DC current gain h FE VCE =5 V,I C = 10mA 300 1200 Gain bandwidth product f T VCE =1 0 V,IC = 10mA 250 MHz Output capacitance C ob VCB = 10V , f = 1.0MHz 3.6 pF Collector-emitter saturation voltage V CE(sat) IC =1 0 0 m A,IB = 2mA 0.12 0.5 V Base-emitter saturation voltage V BE(sat) IC =1 0 0 m V,IB = 2mA 0.85 1.2 V Collector-base breakdown voltage V (BR)CBO IC =1 0 ì A,IE =0 5 0 V Collector-emitter breakdown voltage V (BR)CEO IC =1 m A,RBE = 20 V Emitter-base breakdown voltage V (BR)EBO IE =1 0 ì A,IC =0 2 5 V Turn-on time t on 135 ns Storage time t stg 450 ns Fall time t f 100 ns Marking Marking WT 2SC4695