2SC4695 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
- Adoption of FBET process - High DC current gain + High Vepo (Vepo= 25V) + High reverse hpg (150 typ) - Small ON resistance [Ron=12 (Ig=5mA)] - Very small-sized package permitting 25C4695-applied sets to be made small and slim Absolute Maximum Ratings at Ta = 25°C unit Collector to Base Voltage Vcso 50 v Collector to Emitter Voltage Vogo 20 Vv Emitter to Base Voltage VEBO 25 Vv Collector Current Ig 500 mA Collector Current(Pulse) Icp 800 mA Base Current Ip 100 mA Collector Dissipation Po 250 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current IcBo Vop=40V Ip =0 0.1 pA Emitter Cutoff Current lgpo Vep=20V,Ic=0 01 pA DC Current Gain bre Vor=5V,Ic=10mA 300 1200 Gain-Bandwidth Product fr Vog=10V,Ic=10mA 250 MHz Output Capacitance Cob Vop=10V,f=1MHz 3.6 pF C-E Saturation Voltage Voncat) I¢c=100mA,Igp=2mA 0.12 06 v B-E Saturation Voltage VpEeat) I¢=100mA,Igp=2mA 0.85 1.2 Vv C-B Breakdown Voltage VsrycBo Ic=10hA,Ig=0 50 v C-E Breakdown Voltage Visryceo I¢=1mA,Ip=0 20 v E-B Breakdown Voltage VisryeBo Ig=10pzA,Io=0 25 v Turn-ON time ton See specified Test Circuit. 135 ns Storage Time tetg See specified Test Circuit. 450 ns Fall Time tr See specified Test Circuit. 100 ns Marking: WT Switching Time Test Circuit Package Dimensions 2018A “i 1.0.16 (unit : mm) c ; Bion th 4 tet sins: an ‘ov iNet ok output Ml od - ares [Fos Foe | 1 23 rel 50 | i \\ C: Collector B: Base Unit (Resistance : 2) reSt SHNVO: cP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN “ 7190MH,TA(KOTO) No.3486-1/3
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g_¢ 7 TN s Ji) N83 B10 é | \\ TT ~ g eee Tes PTT N tj j fit || ° | IN oo On 10 ”0 co) 20 40 60 ce) 10 120 «1 160 Base Currently —mA Ambient Temperature,Ta — °C §MNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M@ Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.3486-3/3