2SC4691

2SC4691 PANASONIC

Document overview

• Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon NPN epitaxial planer type For high speed switching n Features l High-speed switching. l Low collector to emitter saturation voltage VCE(sat). l SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–75 3:Collector SS–Mini Type Package 1.6–0.15 1.6–0.1 1.0–0.10.75–0.15 0.45–0.1 0.50.3 0 to 0.1 0.5 0.8–0.1 0.40.4 0.2–0.1 Symbol V CBO V CES V EBO ICP IC PC Tj Tstg Ratings 300 100 125 125 –55 ~ +125 Unit V V V mA mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time Symbol I CBO IEBO hFE * V CE(sat) V BE(sat) fT C ob ton toff tstg Conditions V CB = 15V , IE = 0 V EB = 4V , IC = 0 V CE = 1V , IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA V CB = 10V , IE = –10mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz Refer to the measurment circuit min typ 0.17 450 max 0.1 0.1 200 0.25 1.0 Unit mA mA V V MHz pF ns ns ns Marking symbol :2Y *hFE Rank classification Rank Q R hFE 60 ~ 120 90 ~ 200 Marking Symbol 2YQ 2YR

PC — Ta IC — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB 0 160 40 120 80 14020 100 60 150 125 100 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 120 100 Ta=25˚C 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA IB=3.0mA Collector to emitter voltage VCE (V) Collector current IC (mA ) Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 300 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=75˚C 25˚C –25˚C 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Ta=–25˚C 75˚C 25˚C Collector current IC (mA ) Base to emitter saturation voltage VBE(sat) (V) 0.1 1 10 1000.3 3 30 600 500 400 300 200 100 VCE =1V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 600 500 400 300 200 100 VCE =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) Switching time measurement circuit ton, toff Test Circuit t stg Test Circuit 220W 3.3kW 0.1mF 3.3kW 50W VCC =3V Vout 50W Vin=10V Vbb= –3V Vin Vin Vout ton toff Vout 10% 10% 90%90% 0.1mF 0.1mF A Vout Vin=10V Vbb=2V 90W VCC =10V 500W 50W 910W 500W 1kW Vin tstg Vout 10% 10% (Waveform at A)