2SC4687 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4687
DESCRIPTION
- With TO-3PN package
- High breakdown voltage
- Fast switching speed
- Wide area of safe operation
APPLICATIONS
- For switching regulator applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-peak 14 A IB Base current 3 A Ta=25 2.5 PC Collector power dissipation TC=25 60 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PN) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4687 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=5mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage I C=1mA ;IE=0 500 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage I C=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage I C=3A ;IB=0.6A 1.5 V ICBO Collector cut-off current V CB=500V; IE=0 100 µA IEBO Emitter cut-off current V EB=7V; IC=0 100 µA hFE-1 DC current gain I C=0.1A ; VCE=5V 15 hFE-2 DC current gain I C=3A ; VCE=5V 8 fT Transition frequency I C=0.5A ; VCE=10V 30 MHz
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4687 PACKAGE OUTLINE Fig.2 outline dimensions