2SA1784 SANYO
Document overview
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Technical content
Features
- Adoption of MBIT process - High breakdown voltage (Vogo2 400V) - Excellent linearity of hpg ():2SA1784 Absolute Maximum Ratings at Ta= 25°C unit Collector to Base Voltage Vcso (—)400 Vv Collector to Emitter Voltage VcoEo (—)400 v Emitter to Base Voltage VEBO (-)5 v Collector Current Ic (-)200 mA Collector Current(Pulse) Igp (-)400 mA Collector Dissipation Po 1 WwW Junction Temperature Tj 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta= 25°C. min typ max unit Collector Cutoff Current Toso Vop=(—)300V,Ig=0 (-)0.1 2A Emitter Cutoff Current Tepo Vep=(—)4V,Ic=0 (-)0.1 pA DC Current Gain hee Voe=(-)10V I¢=(—)50mA 60* 200* Gain-Bandwidth Product fp Vce=(—)30V Ic=(—)10mA 70 MHz C-E Saturation Voltage Voxisat) Ic=(—)50mA,Ig=(—)5mA (-0.8)0.6 v B-E Saturation Voltage Vegat) Ic=(—)50mA,Ig=(—)5mA (—)1.0 Vv C-B Breakdown Voltage Vsrycpo Ic=(—)104A, Ig =0 (—)400 v C-E Breakdown Voltage Visryceo I¢=(—)1mA,Rge= © (—)400 v E-B Breakdown Voltage Vosryeso Ig=(—)10uA,Ic=0 (-)5 Vv Output Capacitance Cob Vop=(—)30V,f=1MHz (5)4 pr Reverse Transfer Capacitance Cre Vep=(—)30V,f=1MHz (4)3 pF Turn-ON Time ton See specified Test Circuit. 0.25 “Ss Turn-OFF Time toft See specified Test Circuit. 5.0 ws *; The 2SA1784/2SC4644 are classified by 50mA hrs as follows: 60 _D 120 | 100 E 200 Package Dimensions 2064 (unit: mm) Switching Time Test Circuit ___ co Bee e ott «| | | a ° 3 eT We [3 b My g Wet Ne aro Foc B dbo 101g, = = 101g2 = c= 50MA Ry = 3k, Rg = 2000, at c= 50MA E: Emitter PNPO SES Hite EHS C: Collector B: Base Unit(Resistance : f , Capacitance : F) 25 2st SANYO: NMP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 10 JAPAN . 5170TA(KOTO) No.3520-1/3
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10 SW Time = Ic 0 SW Time — Ic
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9 Fee See SS ta =25°C
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geofP PUANENT oS COT RN] 3” 30 s 20 Te Na 2 He NSH [1] +t NSH Se Pfs 4) an 4 ae a a 2 es aL TTT TT vEET TT PT 10 “100 w 100 Collector to Emitter Voltage, Vogo — V Collector to Emitter Voltage,Vcg - V ta Pe - Ta . Bann 2SA1784/ 2804644 . i 1,0} el oN ET § 08 IS NI wt | | | | od N et LT NTT Zo. gs. | TN ‘ NI PITTS % 0 0) BO 18] 6) 0 ay m0 Ambient Temperature,Ta — °C MINo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power contro! systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. HM Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD.,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ee —— ee ee No.3520-3/3